Dongke Li

Jiaming Chen

Zhaoguo Xue

Teng Sun

Junnan Han

Wanghua Chen
email: chenwanghua@nbu.edu.cn

Etienne Talbot

Rémi Demoulin

Wei Li

Jun Xu
email: junxu@nju.edu.cn

Kunji Chen

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO 2 multilayers

Understanding the distributions and behaviors of dopants in Si nanocrystal are the primary and necessary issues to realize the controllable doping at nanoscale and develop the next generation of optoelectronic devices. This work reports the atomic-scale distributions of phosphorus and boron dopants in Si nanocrystals multilayers. The phosphorus-doped and boron-doped Si nanocrystals/SiO 2 multilayers are fabricated by PECVD and subsequently annealed at 1000 • C. It is found that the locations of phosphorus are redistributed after the formation of Si nanocrystals due to the combined effects of formation energy and self-purification. Phosphorus dopants are mainly distributed at the Si nanocrystals surfaces to passivate the dangling bonds, while part of them incorporate into Si nanocrystals lattice sites to provide free electrons. However, boron dopants exhibit different distributions in contrast to phosphorus. The concentration of boron on Si nanocrystals surfaces can reach as high as 40.0 at. %, which forms a dopant-shell covering on Si nanocrystals. Meanwhile, the boron dopant-shell can modify the surface states of Si nanocrystals like Si-oxide related emission centers and dangling bonds, which is responsible for the luminescence properties. Moreover, the boron-aggregations with concentration near 74.8 at. % are appeared inside Si nanocrystals and led to the damage of crystalline lattice.

Introduction

Due to the size-controllable bandgap and high recombination efficiency under the quantum confinement effect, Si nanocrystal (Si NC) is regarded as one of the most promising candidates of Si-based optical materials [START_REF] Ni | Silicon nanocrystals: unfading silicon materials for optoelectronics[END_REF][START_REF] Priolo | Silicon nanostructures for photonics and photovoltaics[END_REF][START_REF] Liang | Recent progress in lasers on silicon[END_REF]. The related applications in the new generation of optoelectronic devices, like LED [START_REF] Hao | Enhancement in external quantum efficiency of light-emitting diode based on colloidal silicon nanocrystals[END_REF], all Si-based tandem solar cells [START_REF] Cao | Size-Dependent and Enhanced Photovoltaic Performance of Solar Cells Based on Si Quantum Dots[END_REF] and neuromorphic computing [START_REF] Yin | Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite[END_REF] are also gradually reported. Recently, phosphorus (P) and/or boron (B) doping in Si NCs are believed as important methods to further develop novel optoelectronic properties and have attracted extensive attentions [START_REF] Li | Enhanced subband light emission from Si quantum dots/SiO 2 multilayers via phosphorus and boron codoping[END_REF][START_REF] Rohani | Synthesis and Properties of Plasmonic Boron-Hyperdoped Silicon Nanoparticles[END_REF][START_REF] Li | The phosphorus and boron co-doping behaviors at nanoscale in Si nanocrystals/SiO 2 multilayers[END_REF][START_REF] Li | Modulation of surface states by phosphorus to improve the optical properties of ultra-small Si nanocrystals[END_REF]. However, achieving the effective doping in Si NCs is a difficult and complex task due to the quantum confinement effect, surfaces/interface states and surrounding matrix material [START_REF] Li | Doping effect in Si nanocrystals[END_REF][START_REF] Marri | Doped and codoped silicon nanocrystals: The role of surfaces and interfaces[END_REF][START_REF] Oliva-Chatelain | Doping silicon nanocrystals and quantum dots[END_REF], which is also different from that in its bulk counterpart.

Among of those relevant studies, the knowledge of dopant distributions and behaviors in Si NCs is the primary and necessary task to understand the doping induced physics properties and realize the controllable doping at nanoscale. Ni et al. theoretically studied the P and B distributions in the 1.4 nm Si NC embedded in SiO 2 matrix by ab-initio calculations [START_REF] Ni | Density functional theory study on the B doping and B/P codoping of Si nanocrystals embedded in SiO 2[END_REF][START_REF] Ni | Doping Si nanocrystals embedded in SiO 2 with P in the framework of density functional theory[END_REF], and found that the formation energy of P at the Si/ SiO 2 interface or the surface of Si NCs was larger than that in the core. The minimum formation energy of the B dopant was obtained at the subinterface region. Meanwhile, a lot of elemental analysis and spectroscopic methods, like secondary ion mass spectrometry (SIMS) [START_REF] Hao | Phosphorus-doped silicon quantum dots for all-silicon quantum dot tandem solar cells[END_REF][START_REF] Hao | Synthesis and characterization of boron-doped Si quantum dots for all-Si quantum dot tandem solar cells[END_REF], electron energy loss spectroscopy (EELS) [START_REF] Sato | The synthesis and structural characterization of boron-doped silicon-nanocrystals with enhanced electroconductivity[END_REF][START_REF] Sato | Doping and characterization of boron atoms in nanocrystalline silicon particles[END_REF] and X-ray photoelectron spectroscopy (XPS) [START_REF] Perego | Phosphorus doping of ultra-small silicon nanocrystals[END_REF][START_REF] Garcia-Castello | Energetics and carrier transport in doped Si/SiO2 quantum dots[END_REF] are performed to study the dopant distribution and concentration in Si NCs materials. In our previous studies, the depth-profile XPS spectra indicated that P and B dopants were mainly located at Si NCs inner and surfaces rather than the surrounding matrix [START_REF] Chen | Comparative study on P and B doped nano-crystalline Si multilayers[END_REF]. Zhou et al. estimated the activation efficiency of B and P were 2.8-5.2% and 0.3-0.9%, respectively, by the absorption spectra [START_REF] Zhou | Comparative Study on the Localized Surface Plasmon Resonance of Boron-and Phosphorus-Doped Silicon Nanocrystals[END_REF]. However, those measurements are mainly determined the overall distribution and concentration of dopants in Si NCs sample. The precise analysis at atomic-scale are still scarce.

Atom probe tomography (APT) is a potential method to characterize the element information at atomic-scale [START_REF] Chen | Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth[END_REF][START_REF] Konig | Location and Electronic Nature of Phosphorus in the Si Nanocrystal-SiO2 System[END_REF]. Trad et al. have reported the influence of P dopants on the phase separation process and optical properties of Si NCs by APT measurement [START_REF] Trad | Influence of phosphorus on the growth and the photoluminescence properties of Si-NCs formed in P-doped SiO/SiO2 multilayers[END_REF]. In this study, we fabricate P-doped and B-doped Si NCs/SiO 2 multilayers by plasma enhanced chemical vapor deposition (PECVD) system. The atomic-scale distributions and behaviors of P and B are studied by femtosecond laserassisted APT, Raman and electron spin resonance (ESR). Results reveal that P dopants are mainly distributed at Si NCs surfaces to passivate dangling bonds, while B dopants aggregate inside Si NCs inner with a high concentration of 74.8 at. %, and lead to the damage of crystalline lattice.

Experiment

PECVD system equipped with the radio frequency source of 13.56 MHz was adopted to fabricate P-and B-doped Si/SiO 2 multilayers. In brief, SiH 4 gas was ionized to deposit Si sublayer on silicon wafers and quartz substrates. Meanwhile, PH 3 (1 %, H 2 dilution) and B 2 H 6 (1 %, H 2 dilution) were introduced into SiH 4 plasma to act as the dopant gas. The thickness of Si sublayer was controlled by the deposition time. Then, insitu plasma oxidation was performed in oxygen plasma atmosphere to form the thin SiO 2 sublayer. Si sublayer deposition and in-situ oxidation were alternately repeated to obtain the periodically stacked Si/SiO 2 multilayers. The deposited samples were subsequently dehydrogenated at 450 • C and annealed at 1000 • C under nitrogen gas ambient for 1 h, respectively. In this study, the P-doped and B-doped Si NCs samples have the identical nominal doping ratio (2.0 %), which is defined as molar ratio of dopant gas to SiH 4 during the deposition process.

Cross-sectional TEM (Tecnai G2 F20 electron microscope) and Raman spectrum (Horiba HR 800 Raman system, 514 nm laser) were used to characterize the microstructures of Si NCs multilayers. Element mapping and distribution were charactered by UV fermtosecond laserassisted APT system (CAMECA LAWATAP). Low temperature (20 K) Xband ESR spectra were measured by Bruker EMX-10 with liquidnitrogen cooled spectrometer under the center field of 3250 G.

Results and discussions

Fig. 1 (a) shows the Raman spectra of P-doped Si NCs/SiO 2 multilayers. For the as-deposited sample, the Raman spectrum exhibits a broad scattering packet near 470 cm -1 which is associated with the transverse optical mode of amorphous Si and indicate the as-deposited Si sublayers are un-crystallized [START_REF] Khriachtchev | Thermal annealing of Si/SiO2 materials: Modification of structural and photoluminescence emission properties[END_REF]. After 1000 • C annealing, a sharp Raman peak around 519 cm -1 is observed, that is attributed to the transverse optical mode of crystallized Si phase [START_REF] Nikitin | Giant Raman gain in annealed silicon-rich silicon oxide films: Measurements at 785 nm[END_REF]. It indicates the amorphous Si sublayers have been crystallized after 1000 • C high temperature annealing. Further, high-resolution TEM was used to study the cross-sectional microstructure of multilayers. As shown in Fig. 1 (b), the stacked structures of multilayers can be easily distinguished. The thickness of Si and SiO 2 sublayers are about 8.3 and 4.0 nm, respectively. It can be observed that the Si NCs with ellipsoid shapes are uniformly distributed in Si sublayers. The longitudinal size of Si NCs is close to the thickness of Si sublayers due to the constrained crystallization of Si/SiO 2 multilayers. In addition, the stacked structures of SiO x (1 ≤ x ≤ 2)/SiO 2 multilayers are commonly adopted to fabricate the Si NCs embedded in matrix. However, the enriched Si atoms in adjacent SiO x sublayers are easily across SiO 2 sublayers to form large Si NCs under thermal annealing [START_REF] Limpens | Size confinement of Si nanocrystals in multinanolayer structures[END_REF], which can break the constrained crystallization effect of multilayers. Fig. 1 (c) also exhibits the Raman spectra of Bdoped Si NCs/SiO 2 multilayers. After annealing, the Si-Si bonds related Raman peak accompanying with an obvious redshift is detected. The redshift has also observed in the B-doped Si nanowires, which is mainly attributed to the B-doping induced tense stress in films. Meanwhile, a weak and broad Raman peak around 628 cm -1 is observed in Fig. S1, which is believed arising from the Raman scattering related to the B-Si local vibration signals and indicate the B atoms are doped in substitutional sites of the Si NCs [START_REF] Fukata | Impurity Doping in Silicon Nanowires[END_REF]. As shown in Fig. 1 (d), the sizes of B-doped Si NCs within the thickness of the Si sublayers are also strictly obeyed.

To investigate more into details of the element distribution, the APT measurements are performed. Further, the dopant distributions in the multilayers are focally studied. Fig. 3 exhibits the concentration profiles of P dopants for the unannealed and annealed P-doped Si NCs/SiO 2 multilayers. For the asdeposited sample, it is found that the P dopants are randomly distributed in Si sublayers and the averaged concentration is near 0.64 at. %. Meanwhile, few P dopants are located at the SiO 2 sublayers with a low concentration near 0.25 at. %, which is because the SiO 2 sublayers were fabricated by in-situ oxidation of Si sublayers. After annealing, the P dopants in Si sublayers are redistributed. First, P dopants are mainly gathered at the interface regions i.e. the surfaces of Si NCs with a high concentration near 1.36 at. %, and then decrease rapidly towards both side directions, i.e. SiO 2 and Si NCs sublayers. Then, the P concentrations in SiO 2 sublayers keep almost unchanged before and after annealing. It is attributed to the stable stoichiometric ratios and microstructure of SiO 2 sublayers. Moreover, the averaged P concentration inside Si NCs sublayers decrease to 0.45 at. %, which is lower than that of as-deposited Si sublayers. Hence, the P dopants gathered at interfaces are mainly migrated from the diffusion of P dopants, which are initially distributed in Si sublayers.

The redistributions of P dopants in Si sublayers are attributed to the formation of Si NCs under high temperature annealing. APT results have indicated that P dopants prefer to locate at the surfaces regions of Si NCs, while part of them are incorporated into Si NCs inner. The distribution of

P in Si

NCs can be mainly attributed to two reasons, (i) during the growth process, Si NCs tend to expel the dopants to their surfaces to keep the stability of crystal structures, which is similar with the reported selfpurifications effects in Mn-doped CdSe nanocrystals [START_REF] Dalpian | Self-purification in semiconductor nanocrystals[END_REF]; (ii) P dopants have the lowest formation energy when locating at the surface sites than the inner sites of Si NCs [START_REF] Ni | Doping Si nanocrystals embedded in SiO 2 with P in the framework of density functional theory[END_REF]. As a result, the P dopants exhibit higher distribution concentration at the surfaces regions than that of Si NCs inner. Moreover, it is found the P-doped Si NCs sample is n-type with the electron concentration of 1.80 × 10 20 /cm 3 [START_REF] Li | The phosphorus and boron co-doping behaviors at nanoscale in Si nanocrystals/SiO 2 multilayers[END_REF]. The carrier concentrations stand for the electrically activated dopants at lattice sites of Si NCs. Using the estimated atomic density of the Si NCs (6.70 × 10 22 atoms/ cm 3 ), the calculated activation concentration of P dopants in Si NCs is 0.27 at. %, which is more than half of the value measured by APT. It reveals that most of P dopants in Si NCs sublayers are substitutionally incorporated into Si NCs inner.

The distribution of B dopants in Si NCs multilayers is also studied. As shown in Fig. 4 (a), the distribution of B dopants in Si NCs sublayers is more complex. Part of B dopants is gathered at the interfaces between SiO 2 and Si NCs sublayers, which is similar with the distribution of P dopants. Besides, the B dopants at the interface regions diffuse into SiO 2 sublayers to some extent. In order to gain more insight into the B dopant distribution at interfaces regions i.e. the surfaces of Si NCs, the element concentration of section I and II in the mapping image is studied and shown in Fig. 4 (b) and (c), respectively. It is found that the B concentration at the surfaces of Si NCs can reach as high as 40.0 at. %, and the thickness of enriched B region is about 2.0 nm which is like the shells covering on the Si NCs surfaces. In the optical study of B-doped Si NCs multilayers, we have found that the optical emission originated from the Si-oxide centers surrounding Si NCs surfaces are gradually quenching with the increase of B-doping ratios [START_REF] Chen | Study on luminescence quenching of ultra-small silicon nanocrystals due to boron doping[END_REF]. The B dopant shells can cause the segregation of Si and O atoms at the interfaces and suppress the formation of Si-oxide emission centers on Si NCs surfaces, which may be responsible for the quenching of Si-oxide surface states related optical emission. As reported, B dopants are easily bonded with the surrounding O atoms due to the large electronegativity differences between B and O atoms [START_REF] Ni | Density functional theory study on the B doping and B/P codoping of Si nanocrystals embedded in SiO 2[END_REF]. It may result in the diffusion of B dopants into SiO 2 sublayers as shown in the mapping image and concentration profiles.

More interesting, it is found that a lot of B dopants are also aggregated near the middle of Si NCs sublayers, which is different from P dopants. The slice analysis taken from the B aggregation region is performed to study the element composition, the results of Si atoms are shown in Fig. 4 (c). In the slice image, the obvious aggregation of Si atoms which usually standing for the Si NCs is not appeared. Meanwhile, B dopants are enriched in the blank area of Si atoms, like section III and IV. Fig. 4 (e) and (f) show the element concentration profiles of the section III and IV, respectively. It is found the positions with the maximal B concentration appear near the middle of Si sublayers, and the value of B concentration can reach as high as 74.8 at. %. The high B concentration in Si NCs/SiO 2 multilayers is similar with the results of B hyper-doped Si NCs fabricated by laser induced reactor under nonequilibrium conditions [START_REF] Rohani | Synthesis and Properties of Plasmonic Boron-Hyperdoped Silicon Nanoparticles[END_REF]. For the as-deposited B-doped Si/SiO 2 multilayers, the B dopants are initially uniformly distributed in the amorphous silicon sublayers. During the high temperature annealing, the doping process of B dopants is simultaneously accompanied with the growth process of Si NCs. Besides the effect of thermodynamics, the B dopants are also subject to the collisions from the surrounding Si atoms with large atomic mass, which may lead to the B dopants also in a nonor sub-thermodynamic equilibrium state. However, it is difficult to pinpoint the location of this kind B-aggregations in Si NCs due to the two main possibilities, (i) B-aggregation may locates at the surfaces of Si NCs, which means the predesigned Si NC with size near 8.0 nm in the Si layers are divided into two smaller Si NCs by B-aggregation; (ii) B-aggregation locates at the Si NCs inner and act as part of nanocrystals.

Further, the low temperature (20 K) ESR measurement was performed to study the dopants behaviors in Si NCs multilayers. As shown in Fig. 5, a strong ESR signal with g = 2.005 is detected for both 450 • C dehydrogenated P-doped and B-doped multilayers, which can be assigned to the Si dangling bonds [START_REF] Lu | Phosphorus Doping in Si Nanocrystals/SiO2 multilayers and Light Emission with Wavelength compatible for Optical Telecommunication[END_REF]. The Si dangling bonds are generated due to the effusion of H from the Si/SiO 2 multilayers after 450 • C thermally annealing. In our previous studies, the Si dangling bonds were still existed on the surfaces of un-doped Si NCs. After Pdoping, the ESR signal of Si dangling bonds disappeared. It can be attributed to the passivation effect of P dopants locating at the surface regions of Si NCs [START_REF] Lu | Phosphorus Doping in Si Nanocrystals/SiO2 multilayers and Light Emission with Wavelength compatible for Optical Telecommunication[END_REF]. Mimura et al. have also theoretically reported that P can passivate defects such as Si dangling bonds at the Si/SiO 2 interfaces when Si NCs embedded in SiO 2 were doped with P dopants [START_REF] Mimura | Photoluminescence and freeelectron absorption in heavily phosphorus-doped Si nanocrystals[END_REF]. Moreover, a strong signal of conductor electrons is detected with a g value of 1.998. It is attributed to part of P dopants are substitutionally incorporated into Si NCs lattice sites to provide free electrons [START_REF] Li | The phosphorus and boron co-doping behaviors at nanoscale in Si nanocrystals/SiO 2 multilayers[END_REF][START_REF] Li | Modulation of surface states by phosphorus to improve the optical properties of ultra-small Si nanocrystals[END_REF].

After B-doping, the ESR signal of Si dangling bonds on Si NCs surfaces is also disappeared. APT results have revealed that the B dopants locate at Si NCs surfaces and form the dopant-shell covering on the Si NCs surfaces. The shell of B dopants can modify the surface states, such as Si dangling bonds. Veettil et al. have reported the B dopants can passivate the dangling bonds of self-assembled Si NCs [START_REF] Veettil | Passivation effects in B doped selfassembled Si nanocrystals[END_REF]. Sugimoto et al. also found the P/B co-doped Si NCs had an amorphous shell mainly made from B, and the shell induced negative potential on the surface and made co-doped Si NCs dispersible in water [START_REF] Sugimoto | Visible-light driven photocatalytic hydrogen generation by water-soluble all-inorganic core-shell silicon quantum dots[END_REF]. Hence, the disappear of Si dangling bonds of B-doped Si NCs is attributed to the passivation effect of B dopants locating on the Si NCs surfaces regions. The strong ESR signal with g = 2.003 in B-doped Si NCs is originated from the Si vacancy, which is caused by the damage of Si crystalline lattice. In the study of hyper P-doped Si NCs, similar damage of crystalline lattice was also observed due to the large amount of intensively moving P atoms [START_REF] Lu | Phosphorus Doping in Si Nanocrystals/SiO2 multilayers and Light Emission with Wavelength compatible for Optical Telecommunication[END_REF]. For our B-doped Si NCs, the Si vacancy is mainly due to the high incorporation concentration of B in Si NCs inner. In our opinion, the Baggregations observed at the middle region of Si sublayers may locate inside the Si NCs rather than on the surfaces of two small Si NCs. Comparing with P and B dopants, both P and B are preferred to distribute on the surface of Si NCs, which is mainly due to the selfpurification effect during the doping process. Moreover, a large number of defects on the surface of Si NCs generally have low formation energy for dopants, which has been confirmed by ESR results. Ni et al. and Rohani et al. have reported B dopants are easier than P to achieve hyper-doping in Si NCs [START_REF] Rohani | Synthesis and Properties of Plasmonic Boron-Hyperdoped Silicon Nanoparticles[END_REF][START_REF] Zhou | Boron-and Phosphorus-Hyperdoped Silicon Nanocrystals[END_REF]. Ni et al. believe that the collision between Si NCs and B or P atoms is critical to the understanding on the differences in the doping efficiency and dopant distribution between B and P. The collision frequency for B with small atomic mass is larger than that for P, which result in the high doping efficiency of B. In addition to the easily forced collision of B dopants during the Si NCs crystallization, the smaller binding energy of the B-B bond may be also an important factor for the formations of B-aggregations in Si NCs inner and the B-shells on the Si NC surfaces [START_REF] Ni | Density functional theory study on the B doping and B/P codoping of Si nanocrystals embedded in SiO 2[END_REF].

Conclusion

P-doped and B-doped Si/SiO 2 multilayers are fabricate by PECVD system. Si NCs with uniform size distribution are obtained due to the constrained crystallization effect of hetero-structured multilayers. APT mapping reveals that the multilayers have the stable microstructure even annealed under 1000 • C high temperature, and the P dopants in Si sublayers are redistributed accompanying with the formation of Si NCs. For the as-deposited sample, P dopants are randomly distributed in Si sublayers with average concentration near 0.64 at. %. After annealing, the P dopants gather at the surface regions with the concentration reaching to 1.36 at. %. ESR results indicate that the dangling bonds on Si NCs surface are passivated by P dopants, and part of P are also incorporated into Si NCs lattice sites to provide free electrons. In contrast, B dopants inside Si NCs are gathered as aggregations to damage the crystalline lattice. Meanwhile, the B dopants form a dopant-shell on Si NCs surface with the thickness near 2 nm. The B dopant-shell can modify the surfaces states of Si NCs, which may broad the application of Si NCs in optical materials and water-soluble biomonitoring.

CRediT authorship contribution statement

Fig. 1 .

 1 Fig. 1. (a) Raman spectra and (b) cross-sectional high-resolution TEM image of annealed P-doped Si NCs/SiO 2 multilayers; (c) Raman spectra and (d) cross-sectional high-resolution TEM image of annealed B-doped Si NCs/SiO 2 multilayers. The Raman spectra of as-deposited samples are also plotted for comparison.

Fig. 2 (

 2 Fig. 2 (c) shows the APT elemental mapping of annealed P-doped Si NCs multilayers, and the Si and O compositions are separately reconstructed for more intuitive observation on the structures and elements distributions. It is found that the periodically stacked structures of multilayers and the thickness of sublayers keep unchanged after 1000 • C annealing for 1 h. The interfaces between Si NCs and SiO 2 sublayers are smooth and abrupt without the diffusion of O atoms into Si NCs sublayers. In Fig. 2 (d), the Si and O concentration profiles also exhibit structure related periodic variations. The Si contents in Si NCs sublayers reach to as high as 97.8 at. %, and the Si and O concentrations in SiO 2 sublayers also keep at the stoichiometric ratios.Further, the dopant distributions in the multilayers are focally studied. Fig.3exhibits the concentration profiles of P dopants for the unannealed and annealed P-doped Si NCs/SiO 2 multilayers. For the asdeposited sample, it is found that the P dopants are randomly distributed in Si sublayers and the averaged concentration is near 0.64 at. %. Meanwhile, few P dopants are located at the SiO 2 sublayers with a low concentration near 0.25 at. %, which is because the SiO 2 sublayers were fabricated by in-situ oxidation of Si sublayers. After annealing, the P dopants in Si sublayers are redistributed. First, P dopants are mainly gathered at the interface regions i.e. the surfaces of Si NCs with a high concentration near 1.36 at. %, and then decrease rapidly towards both side directions, i.e. SiO 2 and Si NCs sublayers. Then, the P concentrations in SiO 2 sublayers keep almost unchanged before and after annealing. It is attributed to the stable stoichiometric ratios and microstructure of SiO 2 sublayers. Moreover, the averaged P concentration inside Si NCs sublayers decrease to 0.45 at. %, which is lower than that of as-deposited Si sublayers. Hence, the P dopants gathered at interfaces are mainly migrated from the diffusion of P dopants, which are initially distributed in Si sublayers.The redistributions of P dopants in Si sublayers are attributed to the formation of Si NCs under high temperature annealing. APT results have indicated that P dopants prefer to locate at the surfaces regions of Si NCs, while part of them are incorporated into Si NCs inner. The distribution of

Fig. 2 .

 2 Fig. 2. (a) APT elemental mapping and (b) concentration profiles of Si and O compositions for as-deposited P-doped multilayers; (c) APT elemental mapping and (d) concentration profiles of Si and O compositions for annealed P-doped multilayers. Si and O are plotted in red and green color, respectively. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.)

Fig. 3 .Fig. 4 .

 34 Fig. 3. P profiles of unannealed (in pink color) and annealed (in blue color) P-doped Si NCs multilayers. The backgrounds in purple and turquoise colors represent the Si (Si and SiO sublayers, respectively. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.)

Dongke Li :

 Li Investigation, Funding acquisition, Data curation, Formal analysis, Writing -original draft, Writing -review & editing.

Fig. 5 .

 5 Fig. 5. Low temperature (20 K) ESR spectra of P-doped and B-doped Si NCs/ SiO2 multilayers.

Acknowledgement

This work is supported by National Key R&D program of China (2018YFB2200101); NSFC (62004078, 61921005); NSF of Jiangsu Province (BK20201073); NSF of Jiangsu Higher Education Institutions (20KJB510017); Natural Science Foundation of Ningbo (2021J068); ANR DONNA (ANR-18-CE09-0034). Low temperature ESR test was performed on the Steady High Magnetic Field Facilities, High Magnetic Field Laboratory, CAS.

Data availability

No data was used for the research described in the article.

Jiaming Chen: Investigation. Zhaoguo Xue: Investigation. Teng Sun: Investigation. Junnan Han: Investigation. Wanghua Chen: Funding acquisition, Formal analysis, Writing -original draft. Etienne Talbot: Investigation, Funding acquisition. Rémi Demoulin: Investigation, Funding acquisition. Jun Xu: Funding acquisition, Supervision, Writing -original draft, Writing -review & editing.

Declaration of Competing Interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Appendix A. Supplementary data

Supplementary data to this article can be found online at https://doi. org/10.1016/j.apsusc.2022.155260.


Gwénaël Caravaca

Arnaud Brayard

Emmanuelle Vennin

Michel Guiraud

Nicolas Olivier

Christophe Thomazo

Emmanuel Fara

Gilles Escarguel

Kevin G Bylund

James F Jenks

Lithospheric strenght control over depositional environments and foreland accommodation in the Western USA Basin during the Early Triassic

come

Supplements

Artemieva & Mooney, 2001 Oldest lithospheres are:

-Thicker and colder than juvenile counterparts (due to R* elements depletion -More buoyant (d°<d°juvenile lithos.) ⇒ More rigid and resistant to flexuration

Five

  Lithospheric strength control over depositional environments and foreland accommodation in the Western USA Basin during the Early Triassic Gwénaël Caravaca*, Arnaud Brayard, Emmanuelle Vennin, Michel Guiraud, Nicolas Olivier, Christophe Thomazo, Emmanuel Fara, Gilles Escarguel, Kevin Bylund, James Jenks, Daniel Stephen * gwenael.caravaca@u-bourgogne.fr P/T Boundary-Smithian interval (~1,5 ma) in the Sonoma Foreland Basin (western US) ⇒ Basin formed due to Golconda Allochton emplacement around the PTB (Sonoma Orogeny, ~252 Ma) ⇒ Excellent fossil and sedimentary record of the aftermath of the PTB-crisis ⇒ Paleogeography of the region still poorly constrained Empiric observations => Sedimentary record varies in the basin: -Transgressive trends recorded in the basin with marine incursions from the North -Different facies associations: from terrigenous and dolomitic red beds, to mixed bioclastic limestones and terrigenous sediments -Variation in sedimentary thickness No Red Beds No microbial limestones What is the nature of the main controlling factor(s) over the sedimentation in the Sonoma Foreland Basin during the PTU-Smithian interval? Role of the foreland nature of the basin in the aforementioned sedimentary distribution? Aim of this work Methods Database: -43 selected sections after literature and field work -Study of the PTU-Smithian interval -Biostratigraphic framework (after Brayard et al., 2013) Palinspastic reconstructions: -Necessary to obtain an unbiased view of the basin -Original location of the sections Caravaca et al., in prep. Isopach map of the PTU-Smithian interval ⇒ Spatial distribution of sedimentary thickness 2 different parts in the basin: -Northern high thicknesses zone (>300 up to ~550m thick) -Southern low thicknesses zone (~10 up to 250m thick) Caravaca et al., in prep. East-West pattern: -Thickening trend towards West -Lower thicknesses in westernmost parts ⇒ Coherent with Foreland Basin System (sensu DeCelles & Giles, 1996) Caravaca et al., in prep. DeCelles & Giles, 1996 Composition of the basement of the basin? ⇒ Construction of a new terrane map from: -U/Pb dating (literature data) -Bouguer gravity anomaly map (Kucks, 1999) map of the basin Caravaca et al., in prep. Results: terranes map of the basin ⇒ Lithospheric nature is key control to rheological behavior Oldest lithospheres are colder, more rigid, and show weaker density ⇒ Strong lithospheres -Wyoming Terrane (Archean) -Grouse Creek Block (Archean) -Mojave Terrane (Paleoproterozoic) Conversely, juvenile lithospheres show lesser rigidity ⇒ Weak uplifted lithosphere -Yavapai Terrane (Mesoproterozoic) with positive relief due to ARM orogeny ⇒ Weak attenuated lithosphere -Farmington Terrane (Mesoproterozoic Mobile Belt) Northern part of the basin: -Weak lithosphere (Farmington Terrane) -High sedimentary thicknesses -Lower thicknesses on strong lithospheres (Wyoming Terrane and Grouse Creek Block) Southern part of the basin: -Strong lithosphere (Mojave Terrane) -Low sedimentary thicknesses Retrodeformation method Caravaca et al., in prep.


Dupin Jean-Julien
email: jean-julien.dupin@univ-amu.fr

Pascal Amandine
email: amandine.pascal@univ-amu.fr

Godé Cécile
email: cecile.gode@univ-amu.fr

A Systematic Literature Review on Digital Resilience in Organizations: Towards a Conceptualization

Keywords: Digital Resilience, Organizational resilience, Systematic review

The COVID-19 pandemic has been a source of major disruption for organizations and society. This dramatic situation urged the Information System (IS) community to further investigate how potentials of IS were used to cope with such shocks. In this paper, we respond to the recent calls in IS research for a better understanding of digital resilience (DR). The rapid and sporadic growth of knowledge on this emerging notion calls for a comprehensive review. Using a systematic literature review method, we aim to contribute to a clearer conceptualization of DR. First, we distinguish several levels of analysis on DR in the literature: resilience of the IS-user (RIU), resilience of the IT infrastructure (RITI) and resilience of wider systems (RWS). Second, different perspectives on DR are highlighted: resilience through digital and resilience to digital.

Introduction

Recent crises (especially COVID-19 pandemic) highlight the need for organizations to develop their ability to cope with uncertainty when they are confronted to major exogenous shocks (i.e., black a , Taleb, 2013). This dramatic situation has been an opportunity for the Information System (IS) community to further investigate how potentials of digital technologies were used to cope with such shocks [START_REF] Sein | The serendipitous impact of COVID-19 pandemic: A rare opportunity for research and practice[END_REF].

This paper aims to take part to this discussion in further exploring the notion of Digital Resilience (DR) (Boh et al., 2020, Rai et al., 2020b). The interest in this topic can notably be measured through the number of influent conferences and symposiums interested in DR (e.g., ICIS 2021;ECIS 2021;HICCS 2021;AIM 2022). In this paper, we defin DR a the property of an IS to increase the ability of its wider system, to prevent, anticipate, absorb, and adapt to shocks while satisfying a sufficient resilience of itself and of its input systems . By wider system, we mean any entity (e.g., an individual, an organization, a community etc.) that benefits from the design, deployment, and the use of the IS. In this paper, we focus on DR within organizations. We conduct a Systematic Literature Review (SLR) drawing on existing works to address the following research question: What is the current state of research regarding the conceptualization of digital resilience within organizations?

The challenge of this SLR is therefore to identify relevant papers exploring DR but also Organizational Resilience (OR) related to digital. This particularity calls for a specific SLR method. In the next sections, we describe the methodology and present our findings. Lastly, we discuss these findings and suggest directions for future research.

Methodology

We argue that the field of OR presents relevant insights to understand the emerging notion of DR within organizations. OR is defined as how organizations continue to achieve desirable outcomes amidst adversity, strain, and significant barriers to adaptation or development [START_REF] Vogus | Organizational resilience: towards a theory and research agenda[END_REF]. The objective is to gather papers on OR and digital on the one hand, and on what appears directly under the term of DR in the literature on the other hand. We seek to a digi a e i ie ce as well as on organizational resilience AND digital . We perform a SLR of relevant publications within the IS and management literature, carrying out a computerized search of the literature enquiring Business Source Complete (Ebsco) and Web of Science (WoS) library services. We use a combination of 2 databases to ensure a satisfactory representation of the literature [START_REF] Bramer | Optimal database combinations for literature searches in systematic reviews: A prospective exploratory study[END_REF]. The bibliography software Zotero helps in managing references. The articles identification is proceeded by keyword-based search on these 2 a a a : a digital e i ie ce , the other by coupling the term ga i a i a e i ie ce with the Boolean operator and a terms that refer to digital in the literature (table 1). Hence, the first step of the SLR is to search papers under the term digital resilien* into Ebsco and WoS search engine (table 1) (6/51 papers). For the , organization* e i ie * with a total of 9 terms for digital (41/51 papers). The keywords referring to digital are found inductively through an exploratory literature review on DR and digital transformation. We keep the keywords that appeared the most in the literature and ensure a satisfying exhaustivity of topics related to digital technologies in the IS and management literature. To this extent, the SMACIT (Social; Mobile; Analytics; Cloud; Internet of Things) acronym, referring to the most current digital technologies (Sebastian et al., 2017), is particularly helpful. Other terms related to digital are also added such as Artificial Intelligence (AI) (Rai, 2020b) and Distributed Ledger Technology (DLT) (Fraga-Lamas & Fernandez-Caramés, 2019). Drawing on existing methodological framework [START_REF] Tranfield | Towards a Methodology for Developing Evidence-Informed Management Knowledge by Means of Systematic Review[END_REF], the SLR is performed a multilevel process to identify and summarize the fragmented literature on DR. Following established methods and protocols [START_REF] Paul | The art of writing literature review: What do we know and what do we need to know?[END_REF][START_REF] Conz | A dynamic perspective on the resilience of firms: A systematic literature review and a framework for future research[END_REF] and to provide a clear understanding and replicability of our method, we adopt a step-by-step approach (figure 1 in appendix). We operate a format screening to eliminate all non-peer-reviewed article, and all papers from journals lower than B in the ranking of Australian Business Dean Council (ABDC) as recommended for systematic literature review [START_REF] Paul | The art of writing literature review: What do we know and what do we need to know?[END_REF]. We accept empirical papers as well as conceptual papers. A screening on content was performed, based on title and abstract, and later the full text. We kept the articles that fit our definition of DR in the context of organizations. Finally, to get an overview on DR as updated as it can be, we operate the manual addition of proceedings papers from leading conferences in the IS discipline (AIS library and HICCS) (16/51 papers) as it is particularly relevant to include them when studying an emerging notion [START_REF] Bandara | Achieving Rigor in Literature Reviews: Insights from Qualitative Data Analysis and Tool-Support[END_REF].

The analysis part is done following existing guidelines [START_REF] Bandara | Achieving Rigor in Literature Reviews: Insights from Qualitative Data Analysis and Tool-Support[END_REF] on the software N V 12. We first code all definitions of resilience, the levels of analysis, the theoretical foundations, the digital technologies studied, the nature of each paper (conceptual or empirical), the type of shocks mentioned, the type of methodology. A first skimming through the corpus let us also observe two perspectives on DR (table 4 in appendix). The coding was first performed by a duo of authors (25% of the corpus) to ensure reliability. From this preliminary coding, we use the grounded theory [START_REF] Langley | Templates and turns in qualitative studies of strategy and management[END_REF] to see bigger categories emerging from our corpus.

Findings

Meta-analysis of the literature on DR

To get a complete overview of the literature on DR, the 51 papers of our corpus were read and classified into different categories regarding criteria mentioned above. As such, we describe and explain these criteria and categories. This preliminary work offers an comprehensive visual representation of the state of the literature that supports the conceptualization of DR (table 4 in appendix).

Before going deeper into coding, we begin by organizing the corpus according to a range of potentially relevant information. As the paper type has not been an exclusion/inclusion criterion in the constitution of the corpus, we distinguish each paper between Empirical (34/51), Conceptual (4/51), Literature Review (8/51) or Call for Contributions (5/51). We then coded for each paper the type of methodology they used: Qualitative (19/34), Quantitative (13/34), Mixed (2/34) and n/a (i.e., non-applicable, for non-empirical papers).

Following this stage of organizing the corpus, the papers were classified regarding shock, perspective, level of analysis and theoretical lens. First, the concept of resilience is ontologically linked to a shock. Thus, we coded the shocks that were put forward by authors to conduct studies on resilience. We inductively coded the shocks into 4 categories: Cyberthreats (6/51), Natural and man-made hazards (N&M hazards) (7/51), Market and technological changes (M&T changes) (10/51) and COVID-19 (28/51).

Then, in order to better understand the DR perspective, we coded the corpus into two categories: Re i ie ce TO digi a (9/51) and Resilience THROUGH digi a (42/51). It is interesting to note that both perspectives on DR exist in the literature. This work is therefore an opportunity to address the issue: A a a a to digital or a resilience through a ? . W a that these two perspectives should be considered when talking about DR. For example, we could discuss IT-enabled resilience and resilience against IT. One sees the design, deployment, and use of digital technologies as an opportunity for resilience when the other sees it as a threat. As DR cannot only be a solution to external disruptions, neither can it be the only source of disruption. It is interesting however to note that there is an major representation of the perspective of DR as resilience through digital (42/51) rather than to digital (9/51). This reflects a certain optimism from the academic IS and management communities towards the future of digital solutions to tackle disruptions. This also confirms a direction taken by the scientific community and likely accelerated by the definition of DR of Boh et al. (2020) in their call for contributions (MISQ).

Finally, it is interesting to compare these data the different levels of analysis of DR. Heeks and Ospina (2019), followed by Schemmer et al. ( 2021), recognize the existence of several levels of analysis in DR. DR may thus a IS ( IS inputs systems , H & O a, 2019). In a sociotechnical vision of the IS, we consider users of the IS and technologies (softwares and machines) as the IS inputs systems (Schemmer et al., 2021). We also consider the entity that benefits from the exploitation of the IS, in our case, the organization. Drawing on these works, we coded different levels of analysis of DR, namely resilience of IS users (RIU) (7/51), resilience of the technological infrastructure (RITI) (7/51) and e i ie ce f ide e (RWS) (37/51). Considering our search string (coupling organizational resilience i.e., wider system resilience and digital), it is not surprising to find most papers focusing on RWS. Moreover, the main agenda has been resilience of wider social systems (Heeks & Ospina, 2019). Finally, the presence of papers focusing on resilience of IS inputs systems in the context of organizations is interesting. Indeed, these results raise questions on a possible link RIU a RITI a RWS ( . ., W a a a a RIU? ). Although not always explicitly mentioned, authors have been using different theoretical backgrounds to study DR. After identifying each theoretical background, we coded those into bigger categories (theoretical lenses) such as Resources (i.e., dynamic capabilities, Business model innovation, Resource-based view, etc.), Usages (i.e., sociomateriality, theory of effective use, etc.), Culture (organizational learning, entrepreneurial bricolage, agility, improvisation, etc.), Context (communication, sensemaking, enacting, etc.), Psychology (broaden-build theory, coping strategy), IT adoption (TAM, UTAUT, etc.). Authors discussing RIU brought theoretical backgrounds from Psychology, Adoption and Usage when RITI was studied under the scope of Resource and Context. Lastly, most of RWS papers adopted an approach on Resource, but also Culture, Usage and Context (table 4 in appendix).

Thus, the information above offers an overview of the literature on DR. Notably, the two criteria of level of analysis and perspectives are particularly relevant to grasp a holistic meaning of DR: the concept of DR can be treated under different levels of analysis and different perspectives.

Conceptualizing DR

We draw on the triangle of meaning [START_REF] Ogden | The meaning of meaning: A study of the influence of language upon thought and of the science of symbolism[END_REF] for DR conceptualizing. The authors argue that in the analysis of the senses of « meaning », it is desirable to begin with the relations of thoughts, words and things as they are found in cases of reflective speech . [START_REF] Dumez | Q -?[END_REF] suggests using the triangle of meaning to describe what a concept is, shedding light on three articulated attributes: denomination (i.e., words ), comprehension ( . ., things ), and extension ( . ., thoughts ) (table 2). A concept can thus be explained through each of these elements. Denomination refers to the name of the concept, in our case, Digital Resilience. Comprehension relates to the definition of the concept (table 3 in appendix). This definition is the result of a synthesis of the definitions of DR (n=7) in the corpus. Lastly, the extension covers the empirical cases to which the concept will (and will not) apply. We give examples from the corpus for each case of DR presented.

Comprehension

The property of an IS to increase the ability of its wider system, such as the organization, to prevent, anticipate, absorb, and adapt to shocks while satisfying a sufficient resilience of itself and of its input systems (table 3 in appendix)

Extension

We acknowledge the existence of different perspectives of DR (resilience THROUGH digital and resilience TO digital) as well as different level of analysis ( RIU , RITI and RWS ).

Considering two different perspectives and three different levels of analysis of DR, we recognize the existence of six (i.e., 2 perspectives *3 levels of analysis) different cases of DR. We illustrate below these 6 cases, naming them regarding their respective perspective and level of analysis. TO+RIU : Kohn (2020) shows that employees with high digital security resilience perform significantly better in securing and updating devices, generating passwords, and demonstrating a proactive awareness. It emphasizes the importance of DR training in organizations to cope with adverse cyber events. TO+RITI : Some papers have been identifying and suggesting organizational resources to increase RITI capacity. For example, Annarelli et al. ( 2021) develop a framework for cyberresilience from multiple case studies, drawing IT actions at every stage of resilience (planning/preparing, absorbing, recovering, and adapting). TO+RWS : Parra et al. ( 2021) argue that social network algorithms can contribute to radicalizing viewpoints within various communities (e.g., fake news during COVID-19). Since these negative effects are counter-productive with a resilient response to crisis, empowering individuals and communities to develop digital critical thinking is crucial. From an organizational point of view, using digital technologies can sometimes be counterproductive as well (e.g., the millefeuille theory, Kalika et al., 2007). THROUGH+RIU : Kohn (2020b) that digitally resilient employees are better able to deal with uncertainty and change using IS and digital channels. The author focuses on remote work as a capacity that has been developed by employees over the COVID-19 pandemic and will most likely be routinized in the long run, thus enabling a quicker adaptation when potentially facing such disruptive events. THROUGH+RITI : Schemmer et al. ( 2021) explains how AI-based SI in the airline industry can be vulnerable to exogenous shocks such as the COVID-19 pandemic by projecting wrong figure forecasts. By using concept drift detection, this AI-based IS can quickly detect changes in the data distribution and adjust accordingly.

THROUGH+RWS : is the most represented case in our corpus. For example, the digitization of the channels in the health industry helped these organizations to adapt during COVID-19. Furthermore, it provides new opportunities such as the possibility of big data analytics in the health industry to enable better preparedness and learning (understanding of external context, anticipating changes, identifying best practices) (Shaffer et al., 2021).

The adoption of this unifying conception posits DR as an umbrella, interdisciplinary concept that is to become an important area in the academic literature in a digitized and uncertain world.

Discussion and Research Outlooks

In this article, we conceptualize DR in order to offer clearer overview on this notion. Our corpus analysis revealed different levels of analysis on DR. We recognize the resilience of the IS inputs (RIU and RITI) and the resilience of the IS wider systems (RWS). Furthermore, we distinguish two perspectives on DR which are resilience through digital and resilience to digital. In line with these preliminary findings, we discuss additional points.

As it has been presented in this paper, IS inputs (ISusers and IT infrastructure) face disruptions that justify the necessity of building a resilience for these actors. Future research could further explore the individual coping mechanism linked to the introduction of new digital infrastructures and processes using IT adoption theories (eg. TAM4; TTF; Innovation diffusion). Indeed, only one paper in our corpus used this theoretical background. On another matter, other IS inputs than IS user and IT infrastructure could influence DR as well. Future studies could explore the role of resilience of data in time of crisis (eg. how to respond to a decrease or an overflow of data collected? How to digitize new or unknown data? etc.).

Furthermore, the distinction made between RIU, RITI and RWS questions a possible link between the levels of analysis of DR. In other words, do IS-inputs resilience have an impact on OR? This issue could be addressed qualitatively and quantitatively. In a qualitative method, one could for example, in a longitudinal case study, look at how the RIU have affected the organization capacity to prevent, absorb, recover, and adapt from a particular shock. We emphasize as well on the need for more quantitative research on DR. DR does not have a well-known and recognized model to be measured. Future research could exploit previous works of conceptualization to build a model for measuring DR. One could for example reuse attributes of DR (e.g., Heeks & Ospina, 2019;Tim et al., 2020;Al-Abdulghani et al., 2021) and apply scales on them. This also raises issues on what is a good indicator of a resilient organization. Should one look at economic or social indicators? Should these indicators be moderated by the scores of other organizations in the same sector?

The present work recognizes differences in terms of DR level of analysis and acknowledges the existence of two different perspectives of DR. Our proposition of distinguishing DR regarding these two criteria (level of analysis and perspectives) address the problem of a sporadic literature and offers a clearer overview on this concept to the academic IS and management community. Scholars studying DR could use this frame to posit their future work in the literature.

We highlight the over-representation in our corpus of the perspective of DR as resilience through digital as opposed to resilience to digital. While it is not surprising considering the direction given by the latest calls for contributions (Boh et al., 2020;Rai et al., 2020b), we argue that both perspectives of DR are necessary and resilience to digital could draw more attention in the academic community. There is indeed a risk to not considering the challenges and threats that digital technologies applications represent (security, privacy, biases, ethics). The IS academic community should address these issues and demonstrate critical thinking toward the deployment and use of these technologies. It was also insightful to note most papers are treating DR to the scope of the COVID-19 pandemic. While this dramatic event represents an opportunity for research and has been driving studies on resilience [START_REF] Sein | The serendipitous impact of COVID-19 pandemic: A rare opportunity for research and practice[END_REF], we also suggest applying existing knowledge to new scenarios we can expect to face in the future (e.g., climate change and its consequences).

Conclusion

In this paper, we addressed the recent calls in IS research for a better understanding of DR. We are getting deeper into a conceptualization of DR, drawing upon existing works (Heeks & Ospina, 2019;Schemmer et al., 2021) and classifying the literature on DR according to a range of criteria. On an ontological level, we first acknowledged explicitly the role of DR toward wider systems (i.e., organizations, communities, society) but also toward systems at the entry of the IS such as resilience of the IS-users and the IT infrastructure. Two perspectives on DR are acknowledged: a resilience through the design, deployment and use of digital technologies and a resilience to digital disruptions. On a theoretical level, this paper helps scholars to position their work and provides a clear overview of the existing literature.

Our review does not come without limitations. First, the literature on DR is quickly growing. Therefore, periodic systematic reviews will be necessary to apprehend this concept over time. Second, we contribute to the conceptualization of DR in this paper. For matter of length limitations, we did not present any state of knowledge nor any guidelines for practicians regarding DR. We will later mobilize the selected set of papers above to complete this work with more insights. Lastly, for our methodological approach, we chose to identify selective search strings that focus on DR within organizations. However, other research could adopt a different focus (e.g., individuals, governments, etc.).

The COVID-19 pandemic has greatly pushed forward the digitalization of organizations and research on digital toward resilience. As mentioned earlier, the COVID-19 pandemic was a catalyst to DR building processes for many organizations. IS, technology scholars, and practitioners should not wait for the next black swan (i.e., major disruption) to explore DR. Instead, we must continue to study this concept and apply new knowledge to contexts other than the pandemic.

Table 1 . Search string table Scientific databases Search string

 1

	Web	of	TS= ("digital resilien*")
	Science
	Web	of	TS= (	a a	*	* ) AND TS= (	a
	Science			* OR		*		* OR	a
			a OR IT OR	a *	* OR
			AI OR a	a		OR IOT OR
					* OR	a a OR a a * OR
				OR	DLT	OR		*
			technolog* )
	Business		TI "digital resilien*" OR AB "digital resilien*" OR
	Source		KW "digital resilien*"
	Complete
	Business		TI	a a	*	* OR AB	a a	*
	Source			* AND AB (	a		* OR
	Complete			*	* OR	a	a OR IT
			OR	a *		* OR AI OR a	a
				OR IOT OR		* OR
				a a OR a a * OR		OR DLT OR
				*		* )

Table 2 . Towards a conceptualization of digital resilience

 2

	Denomination	Digital Resilience (Al-Abdulghani et al.
		2021; Boh et al. 2021; Schemmer et al.
		2021; etc.)