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Adam Sandler

Adam Richard Sandler (born September 9, 1966) is an American actor and comedian. Primarily a comedic leading actor in films, his accolades include nominations for three Grammy Awards, five Primetime Emmy Awards, a Golden Globe Award, and a Screen Actors Guild Award. In 2023, Sandler was awarded the Mark Twain Prize for American Humor.

Sandler was a cast member on the NBC sketch comedy series Saturday Night Live from 1990 to 1995. He returned to Saturday Night Live as a host in 2019 earning a Primetime Emmy Award nomination. He has starred in Hollywood comedy films that cumulatively grossed over $2 billion worldwide. Sandler had an estimated net worth of $420 million in 2020, and signed a new four-movie deal with Netflix worth over $250 million.

Sandler's comedic roles include Billy Madison (1995), Happy Gilmore (1996), The Waterboy (1998), The Wedding Singer (1998), Big Daddy (1999), Mr. Deeds (2002), 50 First Dates (2004), The Longest Yard (2005), Click (2006), Grown Ups (2010), Just Go with It (2011), Grown Ups 2 (2013), Blended (2014), Murder Mystery (2019) and Hubie Halloween (2020). He also received praise for his dramatic roles in Punch-Drunk Love (2002), Reign Over Me (2007), The Meyerowitz Stories (2017), Uncut Gems (2019), and Hustle (2022). He also voiced Dracula in the first three films of the Hotel Transylvania franchise (2012–2018).

Early life
Sandler was born in Brooklyn, New York, on September 9, 1966, to Judith "Judy" (née Levine), a nursery school teacher, and Stanley Sandler, an electrical engineer. His family is Jewish and descends from Russian Jewish immigrants on both sides. Sandler grew up in Manchester, New Hampshire, after his family moved there when he was six years old. He attended Manchester Central High School. As a teen, Sandler was in BBYO, a Jewish youth group. He graduated from New York University's Tisch School of the Arts in 1988.

1987–1995: Early television and film roles
In 1987, Sandler played Theo Huxtable's friend Smitty on The Cosby Show and the Stud Boy or Trivia Delinquent on the MTV game show Remote Control. After his film debut in Going Overboard in 1989, Sandler performed in comedy clubs, having first taken the stage at his brother's urging when he was 17. He was discovered by comedian Dennis Miller, who caught Sandler's act in Los Angeles and recommended him to Saturday Night Live producer Lorne Michaels. Sandler was hired as a writer for SNL in 1990, and became a featured player the following year. He made a name for himself by performing amusing original songs on the show, including "The Thanksgiving Song" and "The Chanukah Song". Sandler told Conan O'Brien on The Tonight Show that NBC fired him and Chris Farley from the show in 1995. Sandler used his firing as part of his monologue when he returned in 2019 to host the show.

In 1993, Adam Sandler appeared in the film Coneheads with Farley, David Spade, Dan Aykroyd, Phil Hartman, and Jane Curtin. In 1994, he co-starred in Airheads with Brendan Fraser and Steve Buscemi.

1995–2007: Box office success and Happy Madison founding
Sandler starred in Billy Madison (1995) playing a grown man repeating grades 1–12 to earn back his father's respect and the right to inherit his father's multimillion-dollar hotel empire. The film was successful at the box office despite negative reviews. He followed this film with Bulletproof (1996), and the financially successful comedies Happy Gilmore (1996) and The Wedding Singer (1998, his first collaboration with Drew Barrymore). He was initially cast in the bachelor–party–themed comedy/thriller Very Bad Things (1998) but had to back out due to his involvement in The Waterboy (1998), one of his first big hits.

Sandler continued making successful comedy films including Big Daddy (1999), Mr. Deeds (2002), Anger Management (2003), 50 First Dates (2004, his second collaboration with Drew Barrymore), The Longest Yard (2005), and Click (2006). He also formed his film production company, Happy Madison Productions, in 1999, first producing fellow SNL alumnus Rob Schneider's film Deuce Bigalow: Male Gigolo. The company has produced most of Sandler's subsequent films to date, and is on the Sony/Columbia Pictures lot in Culver City, California. Most of its films have received negative reviews from critics, with three considered among the worst ever made yet most have performed well at the box office.

Although his earlier commercially successful films did not receive favorable critical attention, Sandler started to receive more positive reviews beginning with his more dramatic role in Punch-Drunk Love in 2002. Punch-Drunk Love writer and director, Paul Thomas Anderson, had an "obsession-level" love for Sandler's previous movies and wrote the film with him in mind. Sandler was intimidated to work with Anderson upon viewing his previous film Magnolia (2000), but these fears were alleviated upon receiving the script from Anderson. Roger Ebert's review of Punch-Drunk Love concluded that Sandler had been wasted in earlier films with poorly written scripts and characters with no development. Ebert noted that Sandler's character still maintained the "childlike, love-starved" persona from his previous films, but was shown in a new light as the "key to all Adam Sandler films." Sandler was nominated for a Golden Globe Award for Best Actor – Motion Picture Musical or Comedy for his performance. The film marked the beginning of Sandler moving outside the genre of slapstick comedy to take on more serious roles, such as Mike Binder's Reign Over Me (2007), a drama about a man who loses his entire family in the September 11 attacks and then struggles to rekindle a friendship with his old college roommate (Don Cheadle).

2007–2016: Later success and final theatrical films
Sandler starred alongside friend Kevin James in the film I Now Pronounce You Chuck and Larry (2007), and headlined You Don't Mess with the Zohan (2008). The latter was written by Sandler, Judd Apatow, and Robert Smigel, and directed by Dennis Dugan. That same year, Sandler starred along with Keri Russell and English comedian Russell Brand in Adam Shankman's children's fantasy film Bedtime Stories (2008), as a stressed hotel maintenance worker whose bedtime stories he reads to his niece and nephew begin to come true. It marked Sandler's first family film and first film under the Disney banner.

In 2009, Sandler starred in Apatow's third directorial feature, Funny People, a comedy drama about a famous comedian (Sandler) with a terminal illness. The film was released on July 31, 2009. After its release, Funny People and Punch-Drunk Love were cited in the June 2010 announcement that Sandler was one of 135 people (including 20 actors) invited to join the Academy of Motion Picture Arts and Sciences.

In 2010, Sandler appeared in Grown Ups, alongside Kevin James, Chris Rock, Rob Schneider, David Spade, Salma Hayek, Maria Bello, and Maya Rudolph. Sandler and Dickie Roberts scribe Fred Wolf wrote the script and Dennis Dugan directed. Sandler's later comedy films, including Grown Ups and Grown Ups 2, received largely negative reviews. Reviewing the latter, critic Mark Olsen of the Los Angeles Times remarked that Sandler had become the antithesis of Judd Apatow; he was instead "the white Tyler Perry: smart enough to know better, savvy enough to do it anyway, lazy enough not to care." The next year, Sandler starred with Jennifer Aniston in the romantic comedy film Just Go with It. He also voiced a capuchin monkey in Kevin James's Zookeeper, released on July 8, 2011. In 2012, he starred in That's My Boy, as a man who fathered a son (Andy Samberg) with his teacher (Eva Amurri) in high school. In 2013, he guest starred in the Disney Channel Original Series Jessie as himself in the episode "Punched Dumped Love". He and Jessie star Cameron Boyce had worked together in Grown Ups and Grown Ups 2; Sandler's 2020 film Hubie Halloween was dedicated to Boyce's memory. Sandler next reunited with Drew Barrymore for a third time in the Warner Bros. romantic comedy Blended, which was filmed in South Africa and released on May 23, 2014.

In October 2014, Netflix announced a four-movie deal with Sandler and Happy Madison Productions. Also that year, Sandler co-starred in the drama film Men, Women & Children, directed by Jason Reitman. He was considered for the voice of Rocket Raccoon in Marvel's Guardians of the Galaxy but Bradley Cooper was cast instead.

In 2015, Sandler released his last theatrical film, Pixels, based on French director Patrick Jean's 2010 short film of the same name, before transitioning into a distribution deal with Netflix.

2016–present: Transition to Netflix
Sandler's first original film for Netflix was the Western comedy film The Ridiculous 6. Despite being universally panned by critics, on January 6, 2016, it was announced by Netflix that the film had been viewed more times in 30 days than any other movie in Netflix history. Sandler also starred in another Netflix film in 2016, titled The Do-Over.

Sandler starred in the 2017 Netflix film Sandy Wexler, in which he plays a talent manager who falls in love with one of his clients. He returned to dramatic territory in 2017 with Noah Baumbach's family drama The Meyerowitz Stories. In the film, Sandler plays Danny Meyerowitz, who is unemployed and separated from his wife. His experiencing dysfunctional relationships with his brother (Ben Stiller), his sister (Elizabeth Marvel), and his father (Dustin Hoffman). The film premiered in competition for the Palme d'Or at the 2017 Cannes Film Festival where his performance received favorable notices from critics. Peter Debruge, film critic for Variety, wrote of his performance, "With no shtick to fall back on, Sandler is forced to act, and it's a glorious thing to watch". In 2018, Sandler starred in the Netflix film The Week Of alongside Chris Rock. He also starred in a Netflix stand-up special Adam Sandler: 100% Fresh, which was part of his company's Netflix deal and marked his first stand-up film in over two decades. The special was directed by longtime collaborator Steven Brill, while portions of the special was filmed by Paul Thomas Anderson, which marked his first project with Sandler since Punch-Drunk Love sixteen years prior.

On May 4, 2019, Sandler made his first appearance as host of Saturday Night Live, ending the episode with a tribute to his friend and fellow former cast member Chris Farley. Sandler received a Primetime Emmy Award for Outstanding Guest Actor in a Comedy Series nomination for his hosting stint. In June 2019, he reunited with Jennifer Aniston in the Netflix film Murder Mystery, which broke the record for the biggest opening weekend in the company's history, and spawned a sequel, Murder Mystery 2, in 2023.

In December 2019, Sandler starred in the crime thriller drama Uncut Gems, directed by the Safdie brothers. The movie and Sandler's acting received critical acclaim and many end-of-year awards from critics, who noted this role as a career best for Sandler, for which he earned the Independent Spirit Award for Best Male Lead.

In January 2020, Netflix announced a new four-movie deal with Happy Madison Productions worth up to $275 million. Sandler starred in and wrote the 2020 Netflix film Hubie Halloween. Besides, he voiced Leo the lizard in a Netflix's animated coming-of-age musical Leo.

Sandler produced and starred in the 2022 sports drama film Hustle, which received critical acclaim. His performance in the film was repeatedly singled out for praise and he received a nomination for a Screen Actors Guild Award. On March 19, 2023, Sandler was awarded the Kennedy Center’s Mark Twain Prize for American Humor. Many of Sandler's friends and fellow performers, including Ben Stiller, Conan O'Brien, Dana Carvey, and Judd Apatow, spoke at the event.

In 2024, Sandler announced a new stand-up comedy special - his second for Netflix. The special will be directed by Josh Safdie.

Also in 2024, Sandler was named the People's Choice Icon at the 49th People's Choice Awards. In March 2024, Forbes announced that Sandler was the best-paid actor in Hollywood in 2023, earning $73 million.

Public image
Sandler has been referenced multiple times in various media, including in the TV shows The Simpsons, in the episode "Monty Can't Buy Me Love", in the Family Guy episode "Stew-Roids", and in the South Park episode "You're Getting Old". He was also referenced in the video game Half-Life: Opposing Force. The HBO series Animals episode "The Trial" features a mock court case to decide whether Sandler or Jim Carrey is a better comedian.

In 2021, Vogue named Sandler the year's fashion icon for popularizing a "grocery-run look", characterized by oversized T-shirts, XXL pants, and Nike sneakers dubbed as "Adam Sandler style". Menswear brand Old Jewish Men sells a line of basketball shorts inspired by the style. Speaking on the title with Esquire, Sandler remarked: "It took a while. I was working that angle for years. For a while I was like, 'Please accept me and the way I dress.' And 30 years later, they finally came around."

Personal life
Sandler has been married to Jacqueline "Jackie" Sandler (née Titone) since 2003. She converted to Sandler's religion, Judaism. The couple have two daughters, Sadie (b. May 2006) and Sunny (b. November 2008). Sandler's wife and children often appear in his films. Adam's nephew Jared has also been featured in his films, such as Pixels and Home Team.

In 2007, Sandler made a $1 million donation to the Boys & Girls Clubs of America in Manchester, New Hampshire.

Sandler has not publicly discussed his political leanings. It has been reported that he is registered to vote as a Republican. He performed at the 2004 Republican National Convention, and he contributed $2,100 to Rudy Giuliani's 2008 presidential campaign (the maximum amount allowed at the time).

Studio albums
"The Peeper" was made into a flash cartoon, launched over the 1999 Labor Day weekend as a promotion for Stan and Judy's Kid and was watched by over 1 million users during that period, one of the most-watched video clips on the internet at the time.

In 2009 Sandler contributed the Neil Young cover "Like a Hurricane" to Covered, A Revolution in Sound as part of Warner Brothers 50th Anniversary celebrations; the song was performed on the David Letterman Show with a band that included, among others, Waddy Wachtel, who has appeared with Sandler on a number of occasions.

title: Adam Sandler


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Talk:SOGEPA

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What exactly is a "holding company"? Either a link to another article or an explanation should be included. Also, if you are only editing links or spelling I suggest you use the "minor changes" checkbox. Thanks KA

article needs more infortion or it could be proded or afd soonOo7565 17:47, 9 May 2007 (UTC)

license: Creative Commons - Attribution Share-Alike - https://creativecommons.org/licenses/by-sa/4.0/

title: Talk:SOGEPA


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Don Novello

Don Novello (born January 1, 1943) is an American actor, comedian, writer, singer, film director and producer.

He appeared on NBC's Saturday Night Live as the character Father Guido Sarducci from 1978 to 1980, and 1985 to 1986. He appeared as Sarducci in television shows Married... with Children, Blossom, It's Garry Shandling's Show, Unhappily Ever After, Square Pegs, and The Colbert Report, and in the 1980 film Gilda Live. He is the voice of Vincenzo "Vinny" Santorini in the franchise of Atlantis: The Lost Empire.

Early life
Novello was born on January 1, 1943, in Ashtabula, Ohio, the son of Eleanor Eileen Novello (née Finnerty), a nurse, and Augustine Joseph Novello, a physician. He is of Italian and Irish descent.

The family moved to Lorain, Ohio, when Don was a child. In 1961, he graduated from Lorain High School. He subsequently enrolled into the University of Dayton and graduated from it in 1964. In 1965, he graduated with a Bachelor of Foreign Trade degree from the American Graduate School of International Management (renamed the Thunderbird School of Global Management of Arizona State University).

Career
In the late 1960s, Novello worked as an advertising copywriter for Leo Burnett in Chicago.

Novello created the Father Guido Sarducci character in 1973 after finding a monsignor's outfit for $7.50 at a St. Vincent de Paul thrift shop. Adding sunglasses, a broom mustache, cigarette and a thick Italian accent, Sarducci became popular in a San Francisco nightclub. Sarducci appeared on San Francisco Channel 20's Chicken Little Comedy Show, and comic David Steinberg was watching. Steinberg hired Novello as a writer for a TV show that never aired, but he also introduced Novello to Tommy and Dick Smothers, and they hired Novello, too. Novello performed on The Smothers Brothers Show in 1975, appearing as Sarducci. He also was with Pat Paulsen during Paulsen's "Presidential Campaign Tour" in the mid-70s as his "Campaign Manager."

In the 1970s, Novello started to write letters to famous people under the pen name of Lazlo Toth (after Laszlo Toth, a deranged man who vandalized Michelangelo's Pietà in Rome). The letters, written to suggest a serious but misinformed and obtuse correspondent, were designed to tweak the noses of politicians and corporations. Many of them received serious responses; Novello sometimes continued the charade correspondence at length, with humorous results. The letters and responses were published in the books The Lazlo Letters, Citizen Lazlo!, and From Bush to Bush: The Lazlo Toth Letters.

The Lazlo Letters, Novello's first book of stilted letters to celebrities, caught the attention of Lorne Michaels, producer of Saturday Night Live. Novello was hired as a writer for the show's third season in 1977–1978 where he remained through the fifth season, and returned as a writer in the eleventh season. He also appeared numerous times on the show in the Father Guido Sarducci character.

In 1980, under the name of Father Guido Sarducci, he sang lead vocals on the Warner Bros. Records release "I Won't Be Twisting This Christmas"/"Parco MacArthur" (WBS49627). Novello co-wrote the first tune with M. Davich, and the second tune is an Italian language cover of "MacArthur Park", the Jimmy Webb song, in an arrangement similar to that recorded by Richard Harris.

Novello made newspapers around the world when he visited the Vatican in 1981 wearing the Father Guido Sarducci costume and, while taking photographs for a magazine article in an area where photography was prohibited, was arrested by the Swiss Guards along with his photographer (Paul Solomon), and eventually charged with "impersonating a priest". The charges were later dropped, and Solomon managed to protect the film from confiscation.

In his stage show in Las Vegas and Reno with the Smothers Brothers, Sarducci rolled a wheelchair with a dummy in the robes of a cardinal. In the act, Sarducci explained he was the assistant of 108-year-old "Cardinal Dario Fungi."

For a brief period in 1982, Novello was a producer on SCTV, a Toronto-based comedy show starring Martin Short, Joe Flaherty, John Candy, Eugene Levy, Dave Thomas, Rick Moranis, Andrea Martin and Catherine O'Hara. He was installed by NBC as one of a series of producers for the show's fourth season, and produced a total of nine episodes.

In 1983, Novello had a cameo as Father Sarducci in the video for Rodney Dangerfield's comedy rap song "Rappin' Rodney" which was heavily played on MTV.

In 1984 Novello wrote The Blade, a high school yearbook parody in which the students are represented by sheep. Novello co-wrote the unfilmed script for Noble Rot with John Belushi. He also narrated Faerie Tale Theatre's third-season episode Pinocchio with Paul Reubens as the titular puppet. Also in 1984, Novello appeared in the music video for the Jefferson Starship song "No Way Out".

In 1989, Novello co-starred in the anthology film New York Stories in the Francis Ford Coppola-directed segment, Life Without Zoe. In his 2 1/2 star review of the movie, Roger Ebert cited Novello for giving "the most engaging performance in the movie."

In 1990, Novello portrayed "Dominic Abbandando" in the film The Godfather Part III. Abbandando appears with speaking lines in the first scene as public relations and media coordinator for Don Michael Corleone. Most notable is when he slaps down a news reporter with the challenge: "You think you know better than the Pope?" Novello appears in many other scenes as well, shadowing George Hamilton, and in the climactic scene on the steps of the Palermo opera house, Teatro Massimo.

In 2001, he lent his voice to the character Vincenzo "Vinny" Santorini in the Disney animated film Atlantis: The Lost Empire, and subsequently in the direct-to-video sequel Atlantis: Milo's Return. In 2003, he filed papers to enter the 2003 California recall election, but failed to collect enough valid signatures to qualify for the ballot.

In 2005, after the death of Pope John Paul II, Novello, as Father Guido Sarducci, reprised his former SNL role as "Special Vatican Reporter" for Air America Radio host (and fellow Saturday Night Live alumnus) Al Franken. He continued this role until the election of Pope Benedict XVI. In 2006, he portrayed the role of Galileo on the podcast "The Radio Adventures of Dr. Floyd".

He portrayed Pope Pius XII in the 2009 short film All in the Bunker.

On June 23, 2010, he appeared on The Colbert Report as Father Guido Sarducci.

On October 30, 2010, he gave the benediction at the Rally to Restore Sanity and/or Fear hosted by Jon Stewart and Stephen Colbert.

American recording artist Guthrie Thomas credited Don Novello as "the best performer in the room" when Novello appeared as Father Guido Sarducci on one of Thomas' albums in a recording studio full of famous performers.

Personal life
Novello resides in San Anselmo, California. He has one brother, Joseph "Joe" Novello, and one sister, Eileen. His former sister-in-law Antonia Novello M.D. served as Surgeon General of the United States from 1990 to 1993. His niece is film producer Holly Wiersma (Wonderland, Billionaire Boys Club).

Selected acting credits

 * Saturday Night Live (1978–1980, 1985–1986) (TV) – Father Guido Sarducci
 * Gilda Live (1980) – Father Guido Sarducci
 * Square Pegs (1982) (TV) – Father Guido Sarducci
 * Mr. Mike's Mondo Video (1979) – Men in Film Room (voice, uncredited)
 * Become an Artist (1982) – Father Guido Sarducci
 * Head Office (1985) – Sal
 * Father Guido Sarducci Goes to College (1985) – Father Guido Sarducci
 * It's Garry Shandling's Show (1986) (TV) – Father Guido Sarducci
 * Tucker: The Man and His Dream (1988) – Stan
 * New York Stories (1989) – Hector (segment "Life without Zoe")
 * The Spirit of '76 (1990) – Translator
 * The Godfather Part III (1990) – Dominic Abbandando
 * PBS Great Performances La Pastorela: The Shepherd's Tale (1991) – Father Guido Sarducci
 * Teenage Bonnie and Klepto Clyde (1993) – Sanchez
 * Blossom (1993) – Father Guido Sarducci
 * One Night Stand (1995) – Warren Miller
 * Casper (1995) – Father Guido Sarducci
 * Married... with Children (1995) (TV) – Father Guido Sarducci
 * Jack (1996) – Bartender
 * Touch (1997) – Father Navaroli
 * Just the Ticket (1999) – Tony
 * The Adventures of Rocky and Bullwinkle (2000) – Fruit vendor twins
 * Just One Night (2000) – Italian drifter
 * Nothing Sacred (2000) – Caterer
 * Atlantis: The Lost Empire (2001) – Vincenzo 'Vinny' Santorini (voice)
 * Atlantis: Milo's Return (2003) – Vincenzo 'Vinny' Santorini (voice)
 * Rent Control (2005 film)'' (2005) – Rico
 * Factory Girl (2006) – Mort Silvers
 * The Colbert Report (2010) (TV) – Father Guido Sarducci
 * Twixt (2011) – Melvin
 * Palo Alto (2013) – Mr. Wilson

Writing credits

 * The Smothers Brothers Show (1975) (TV)
 * Van Dyke and Company (1976) (TV)
 * Saturday Night Live (1978–1986) (TV)
 * Things We Did Last Summer (1978) (TV)
 * Gilda Live (with Gilda Radner, Anne Beatts, Lorne Michaels, Michael O'Donoghue, Rosie Shuster, Marilyn Suzanne Miller, Paul Shaffer and Alan Zweibel) (1980)
 * SCTV (1982) (TV)
 * Noble Rot (with John Belushi) (1982) (unproduced)
 * A Man Called Sporacaione (1982) (unproduced)
 * Blondes vs. Brunettes (with Lisa Medway) (1984) (TV)
 * Father Guido Sarducci Goes To College (1985) (VHS)
 * Our Planet Tonight (1987) (TV)

Albums

 * Father Guido Sarducci Live at St. Douglas Convent (1980)
 * Breakfast in Heaven (1986) as Father Guido Sarducci
 * Everybody's Free to Wear Camouflage (2000) (CD Single) written by Cat McLean, Don Novello and Narada Michael Walden, which was a top 20 hit in the UK. Performed as Father Guido Sarducci
 * One Hundred Bulbs on the Christmas Tree Party (2006) as Father Guido Sarducci

Appeared on the compilations Holidays in Dementia (1995) and A Classic Rock Christmas (2002). He made guest appearances on the Handsome Boy Modeling School albums So... How's Your Girl? (1999) and White People (2004).

title: Don Novello


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Trimethoprim

Trimethoprim (TMP) is an antibiotic used mainly in the treatment of bladder infections. Other uses include for middle ear infections and travelers' diarrhea. With sulfamethoxazole or dapsone it may be used for Pneumocystis pneumonia in people with HIV/AIDS. It is taken orally (swallowed by mouth).

Common side effects include nausea, changes in taste, and rash. Rarely it may result in blood problems such as not enough platelets or white blood cells. Trimethoprim may cause sun sensitivity. There is evidence of potential harm during pregnancy in some animals but not humans. It works by blocking folate metabolism via dihydrofolate reductase in some bacteria, preventing creation of bacterial DNA and RNA and leading to bacterial cell death.

Trimethoprim was first used in 1962. It is on the World Health Organization's List of Essential Medicines. It is available as a generic medication.

Medical uses
It is primarily used in the treatment of urinary tract infections, although it may be used against any susceptible aerobic bacterial species. It may also be used to treat and prevent Pneumocystis jirovecii pneumonia. It is generally not recommended for the treatment of anaerobic infections such as Clostridium difficile colitis (the leading cause of antibiotic-induced diarrhea). Trimethoprim has been used in trials to treat retinitis.

Resistance to trimethoprim is increasing, but it is still a first line antibiotic in many countries.

Spectrum of susceptibility
Cultures and susceptibility tests should be done to make sure bacteria are treated by trimethoprim.
 * Escherichia coli
 * Proteus mirabilis
 * Klebsiella pneumoniae
 * Enterobacter species
 * Coagulase-negative Staphylococcus species, including S. saprophyticus
 * Streptococcus pneumoniae
 * Haemophilus influenzae

Common

 * Nauseas
 * Change in taste
 * Vomiting
 * Diarrhea
 * Rashes
 * Sun sensitivity
 * Itchiness

Rare

 * Can cause thrombocytopenia (low levels of platelets) by lowering folic acid levels; this may also cause megaloblastic anemia.
 * Trimethoprim antagonizes the epithelial sodium channel in the distal tubule, thus acting like amiloride.  This can cause increased potassium levels in the body (hyperkalemia).
 * Can compete with creatinine for secretion into the renal tubule. This can cause an artificial rise in the serum creatinine.
 * Use in EHEC infections may lead to an increase in expression of Shiga toxin.

Contraindications

 * Known hypersensitivity to trimethoprim
 * History of megaloblastic anemia due to folate deficiency

It may be involved in a reaction similar to disulfiram when alcohol is consumed after it is used, in particular when used in combination with sulfamethoxazole.

Pregnancy
Based on the studies that show that trimethoprim crosses the placenta and can affect folate metabolism, there has been growing evidence of the risk of structural birth defects associated with trimethoprim, especially during the first trimester of pregnancy.

The trophoblasts in the early fetus are sensitive to changes in the folate cycle. A 2013 study found a doubling in the risk of miscarriage in women exposed to trimethoprim in the early pregnancy.

Mechanism of action
Trimethoprim binds to dihydrofolate reductase and inhibits the reduction of dihydrofolic acid (DHF) to tetrahydrofolic acid (THF). THF is an essential precursor in the thymidine synthesis pathway and interference with this pathway inhibits bacterial DNA synthesis. Trimethoprim's inhibitory activity for bacterial dihydrofolate reductase is sixty thousand times greater than for human dihydrofolate reductase. Sulfamethoxazole inhibits dihydropteroate synthase, an enzyme involved further upstream in the same pathway. Trimethoprim and sulfamethoxazole are commonly used in combination due to possible synergistic effects, and reduced development of resistance. This benefit has been questioned.

History
Trimethoprim was first used in 1962. In 1972, it was used as a prophylactic treatment for urinary tract infections in Finland.

Its name is derived from trimethyloxy-pyrimidine.

title: Trimethoprim


text:
Talk:Mavis Gallant

Untitled
Parts of this article bear a remarkable similarity to 'Mavis Gallant:storyteller international' at http://collections.ic.gc.ca/heirloom_series/volume5/226-227.htm especially the first few paragraphs. So which came first, the chicken or the egg? Did the wikipedian copy from them or did they copy from us? The wikipedia article has also been adapted for another website which acknowledges its source... KJ 02:17 Oct 12, 2002 (UTC)

This brief article is not at all accurate, I think. It implies that Mavis went to convent schools because her parents died when she was young but her parents were still alive when she went to those schools. Her father was English and a failed artist who did die young but her mother was a woman entirely unsuited to be a mother with whom Mavis moved to New York. She came back to Canada as a young adult to work for the Montreal Standard. I have never heard her described as Jewish. Her surname is French, the surving artifact of a man to whom she was briefly married. Her mother, I seem to recall, was of Scottish descent or, at least, partly so.

Mavis Gallant won the Lannan Foundation prize in 2004. Should be added to awards.

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Dalí Theatre and Museum

The Dalí Theatre and Museum (Teatre-Museu Dalí, ; Teatro-Museo Dalí) is a museum dedicated to the artist Salvador Dalí in his home town of Figueres, in Catalonia, Spain. Salvador Dalí lived there from 1984 to 1989, and is buried in a crypt below the stage. The museum received 1,368,755 visitors in 2016.

Museum
The heart of the museum is the town's theatre that Dalí knew as a child. It was where one of the first public exhibitions of young Dalí's art was shown. The old theatre was burned during the Spanish Civil War and remained in a state of ruin. In 1960, Dalí and the mayor of Figueres decided to rebuild it as a museum dedicated to the town's most famous son. In 1968, the city council approved the plan, and construction began the following year. The architects were Joaquim de Ros i Ramis and Alexandre Bonaterra. The museum opened on September 28, 1974, and it expanded through the mid-1980s. The museum now includes buildings and courtyards adjacent to the old theatre.

The museum displays the single largest and most diverse collection of works by Salvador Dalí, the core of which was from the artist's personal collection. In addition to Dalí paintings from all decades of his career, there are Dalí sculptures, three-dimensional collages, mechanical devices, and other curiosities from Dalí's imagination. A highlight is a three-dimensional anamorphic living-room installation with a Mae West Lips Sofa, a custom sofa that looks like the face of Mae West when viewed from a certain spot.

The museum also houses a small selection of works by other artists collected by Dalí, ranging from El Greco and Bougereau to Marcel Duchamp and John de Andrea, In accordance with Dalí's specific request, a second-floor gallery is devoted to the work of his friend and fellow Catalan artist Antoni Pitxot, who also became director of the museum after Dalí's death.

A glass geodesic dome cupola crowns the stage of the old theatre, and Dalí is buried in a crypt below the stage floor. The space formerly occupied by the audience has been transformed into a courtyard open to the sky, with Dionysian nude figurines standing in the old balcony windows. A Dalí installation inside a full-sized car, inspired by Rainy Taxi (1938), is parked near the centre of the space.

Art collection
The Dalí Theatre and Museum holds the largest collection of major works by Dalí in a single location. Some of the most important exhibited works are Port Alguer (1924), The Spectre of Sex-appeal (1932), Soft self-portrait with grilled bacon (1941), Poetry of America—the Cosmic Athletes (1943), Galarina (1944–45), Basket of Bread (1945), Leda Atomica (1949), Galatea of the Spheres (1952), Crist de la Tramuntana (1968), and Dalí Seen from the Back Painting Gala from the Back Eternalised by Six Virtual Corneas Provisionally Reflected by Six Real Mirrors (1972-73).

There is also a set of works created by the artist expressly for the Museum, including the Mae West room, the Palace of the Wind room, the Monument to Francesc Pujols, and the Cadillac plujós.

A collection of holographic art by Dalí, and a collection of jewellery he designed are on display. Another room contains a bathtub and a side table with an open drawer and a lamp, all of which Dalí had installed upside-down on the ceiling.

An extension to the museum building contains a room dedicated to optical illusions, stereographs, and anamorphic art created by Dalí. The artist's final works, including his last oil painting, The Swallow's Tail (1983), are on display here.

title: Dalí Theatre and Museum


text:
Bob Zmuda

Bob Zmuda (born December 12, 1949) is an American writer, comedian, producer, and director best known for his collaboration with comedian and performance artist Andy Kaufman.

Biography
Zmuda occasionally portrayed Kaufman's Tony Clifton character on stage and for television appearances. In a 2006 interview, Zmuda told the Opie and Anthony Show that he was masquerading as Tony Clifton with David Letterman, and that Letterman did not find out until years later.

In 1986, Zmuda founded the American version of Comic Relief, an annual event that raises money to help the homeless in the United States. The event was televised on HBO, and was hosted by comedians Robin Williams, Billy Crystal and Whoopi Goldberg.

In 1999, Zmuda wrote a book about Kaufman's life, titled Andy Kaufman Revealed!, which purported to unveil many tricks and hoaxes that the two pulled off in front of audiences and television cameras in the 1980s. One critic praised the book as "the ultimate insider's look at Kaufman's life", while some of Kaufman's fans and members of Kaufman's family criticized it for inaccuracies about Kaufman.

Later that year, Miloš Forman directed Man on the Moon, the story of Kaufman's life. Zmuda created the "Tony Clifton" makeup for the film, and made a brief appearance portraying comedian Jack Burns, one of the producers, who gets into a brawl on stage during one of Kaufman's appearances on the 1980–82 ABC late night comedy show, Fridays. Zmuda was also Man on the Moon's co-executive producer. On camera, the character of Bob Zmuda was played by Paul Giamatti. Stanley Kaufman, Andy's father, criticized Zmuda's influence on the film shortly after its release, writing in the form of Andy speaking from beyond the grave.

Sam Simon, executive producer on Taxi, revealed in a 2013 interview with Marc Maron for the WTF Podcast that the portrayal of Andy on the show was "a complete fiction" largely created by Bob Zmuda, who he maintained has a "vested interest" in creating stories about Kaufman. In the interview Simon stated that Kaufman was "completely professional" and that he "told you Tony Clifton was he", but conceded that Kaufman would have "loved" Zmuda's version of events.

In 2014, Zmuda co-authored another book with new anecdotes about Kaufman's desire to fake his death entitled Andy Kaufman: The Truth, Finally, which states that Kaufman's death was indeed a prank. Zmuda says that Kaufman is still alive and that Kaufman would soon be revealing himself as his upper limit on the prank was thirty years. Zmuda now states that Kaufman offered to leave him money since Zmuda's career was largely dependent on Kaufman performing but he turned it down because he believed it would implicate him in a crime. The terms of the book deal were not disclosed.

On November 7, 2014, Bob Zmuda appeared as a guest on Greg Fitzsimmons' podcast, Fitzdog Radio. During the interview, Zmuda claimed to have invested $50,000 in the new book. He stormed off the podcast after Fitzsimmons doubted Zmuda's intentions regarding claims of Kaufman's staged death.

On November 16, 2014, a post on the Tony Clifton Facebook page claimed that Zmuda had died at the Moonlite BunnyRanch, sourcing the information to a UPI article. The same day, the BunnyRanch tweeted that they had been asked by Zmuda's management not to comment, with a link to the hoax Facebook story.

Two days later, comedy news website The Interrobang posted a story with photos, verifying that Zmuda was not dead. Later that day, UPI posted a story, confirming the hoax.

Filmography

 * Andy's Funhouse (1977) TV
 * Andy Kaufman Plays Carnegie Hall (1979) video
 * My Breakfast with Blassie (1983) film
 * D.C. Cab (1983) film
 * Comic Relief (1986) cable TV special
 * I'm from Hollywood (1989) TV special
 * Batman Forever (1995) film
 * Man on the Moon (1999) film
 * Andy Kaufman's Really Big Show (1999) TV special
 * The Number 23 (2007) film
 * Saint Bernard (2013) horror film
 * Jim & Andy: The Great Beyond (2017) documentary film

title: Bob Zmuda


text:
Talk:Moldova

Extended-confirmed-protected edit request on 18 October 2023
Vandalization alert: the sentence/phrase "pierogi (called 'Chiroște' in Moldovan) are another traditional staple and are often stuffed with a soft cheese in Moldova." is factually incorrect as any Moldovan/Romanian person may confirm.

Proposed change: Delete the sentence/phrase

Pierogi is a Polish food, and it's something akin to dumplings. No such word "Chiroște" exists in Romanian: https://dexonline.ro/definitie/chiroște (or 'Moldovan' as it was written by the person who vandalized the article), neither in cultural register of speech nor in informal register of speech anywhere in Moldova. Octavix (talk) 23:15, 18 October 2023 (UTC)
 * I can verify from a simple search that the dish exists and is well-known in Moldova. The statement is sourced (albeit to blogs), and the article about pierogi also includes the same statement with a different reference. I have, however, amended the sentence for other corrections, including the reference to the Moldovan language. –LaundryPizza03 ( d c̄ ) 04:57, 19 October 2023 (UTC)

"other" in Ethnic Groups section
This should link to Demographics of Moldova as with other countries wikipedia pages. 2605:A601:AA3B:5500:1006:275C:69:C830 (talk) 02:49, 29 October 2023 (UTC)

Excessive WP:Recentism in the History section
Looking at the historical section, there seems to be excessive detail and trivia regarding the post-2019 period. Thus, there are 1,532 words about the first 2,000 years, 909 words about 1918-1989 (70 years), 1,375 words about the period 1989-2019 (30 years), and 2,385 words about the 2019-2024 period (5 years)!! I urge editors seeking to add anything related to this period to first take a moment and think whether a particular event is really relevant for a historical overview. I also invite watchers to try and summarise the content already in the article in order to achieve some kind of balance. Regards. Anonimu (talk) 13:24, 30 April 2024 (UTC)

 * Could we just hive the whole excess off to History of Moldova, which contains about four paragraphs for the same period? CMD (talk) 15:24, 30 April 2024 (UTC)

Extended-confirmed-protected edit request on 6 May 2024
Change the Gini index for the year 2019 to 2021: change 26.0 to 25.7 (decrease) Link: https://data.worldbank.org/indicator/SI.POV.GINI?locations=MD LeinadWalter (talk) 12:33, 6 May 2024 (UTC)
 * Red question icon with gradient background.svg Not done: it's not clear what changes you want to be made. Please mention the specific changes in a "change X to Y" format and provide a reliable source if appropriate. — FenrisAureus ▲ (she/they)   ( talk ) 07:37, 21 May 2024 (UTC)

Please edit this sentence
Please change "Notably, Moldova has among the highest alcohol consumption per capita in world, at 15.2 litres" to "Notably, Moldova has among the highest alcohol consumption per capita in the world, at 15.2 litres"

Thank you! JohnR1Roberts (talk) 20:22, 14 May 2024 (UTC)

 * Also, maybe remove the word "Notably" since it's sort of editorializing? don't know about that though JohnR1Roberts (talk) 20:22, 14 May 2024 (UTC)

title: Talk:Moldova


text:
Talk:Field-effect transistor

Correction
Most of what I've done here doesn't need any explanation, but there's one correction I think warrants a note. I replaced every instance of "glass" with "oxide". This is because the silicon dioxide layer under a gate is not glass. Glass would not work. A glass is an amorphous solid - irregular arrangement of atoms. The common usage of "glass" happens to be an instance of this. SiO2 in MOSFETs is crystalline, not glass. -- Tim Starling

 * Small correction: amorphous oxides can work perfectly well as gate oxides. see link. At least as far as I know, these films are almost entirely amorphous.  The best films are done with ECR, but you can also use PECVD and get decent results.  On physical grounds, I don't see any reason why a gate dielectric has to be crystalline in "work".  --User:Dgrant

 * You're the man Dave, I'll take your word for it. Before you came along, I didn't know amorphous oxides were used for anything other than window glass :) I notice that the resistivity of the oxide in your reference is many orders of magnitude less than for crystalline silicon. That would degrade performance somewhat, but at least the breakdown voltage is still high. -- Tim Starling

 * "Oxide" is more correct than "Glass". A glass is not only amorphous but it also contains lots of impurities of highly mobile ions as softener, making it very inadequate as gate oxide. Dgrat is right about amourphous oxides, although they will result in very instable transistors. In organic transistors, even polymers are used as gate dieletric. --Qdr 17:12, 17 Jul 2004 (UTC)

what does "whereas those to the left abstract from the body contact." mean? It doesn't make any sense to me, or at least is doesn't convey the indended meaning, in my mind. dave

 * It doesn't mean anything. I changed it to something which makes sense, and is probably right. I seem to remember seeing some FET-like structures with the body insulated from the backside, but I don't think they do that for MOSFETs. -- Tim Starling 00:39 May 14, 2003 (UTC)

 * You have that in SOI (Silicon on Insulator) FETs, but these work slightly different.--Qdr 17:12, 17 Jul 2004 (UTC)

I edited the terminals section. I didn't see any discussion about it on this page. All FET's have 4 terminals (except possibly JFETs, but I'm pretty sure they do. I'll check on this and add an exception if they don't). Most of the time they are connected internally because the body effect is only useful in a couple of cases and is detrimental in most others. There are times that it doesn't matter.

The internal connection is made for three reasons. The first is to simplify circuit design. Why have a 4th terminal come out of the package if it's just going to be connected to one of the others. The second is to reduce the cost of the package. A fourth terminal adds to cost and complexity of the package, especially since there are times that you want the body to be at a very different voltage then the source. The third reason is that there is some resistance to the leads and in some cases, such as high tempreature and high current use, that resistance can cause the small current running along the body lead and the large current running along the source lead to create a measurable differential between the body and source voltages. This causes a measurable amount of difference in the threashold voltage due to the body effect, which will cause irregular switching voltages in digital circuits and plays havoc with the gain in analog circuits. By making the connection internally the designer can help to negate those effects and keep the source and body as close in voltage as possible. High frequency switching can also bring the body effect into play because there is a measurable current flowing from the gate to the body due to the capacitance.

I can think of two, possibly three, times that one would want a seperate body connection. The first is in digital designs, where you can better control the switching characteristics by connecting the body of the N-channel to the GND and the body of the P-channel to Vdd because the source may be connected to another FET's drain. The second is in analog FET switches, where one takes an N-channel and connects its drain and source in parallel with a P-channel (Although in this case they are simple FET's, which don't have a drain or source. The parasitic diode of the FET is actually designed in). The body of the P-channel goes to Vdd and the N-channel to GND. The gate of the N-channel gets driven with a signal to Vdd and the P-channel gets driven with the N-channel signal inverted. As the N-channel gate goes high, the P-channel gate goes low. This design allow the passing of analog signals higher than Vdd and lower than GND. The only limit on amplitude is Vds max. The third I am not sure about because I can't remember if biasing the base seperately gave the FET better temp characteristics or worse. It was either to stabalize it or make it into a device capable of reading tempreatue. I'll look it up and maybe find a place for it on the MOSFET page. --Jeffrobins

 * JFETs indeed only have 3 connections. There are only 3   places to connect a JFET, there is no "body" to it. Also, I have never used the terms listed her body/bulk/etc, I always used "substrate" and it was my understanding that this was a more common term. I think it should at least be added as a name. Incidentally, the MOSFET article, though usually using the term "body" does, at least once, say "substrate." I think it should also be mentioned that it is very common for the substrate (or body, if you will) to be internally connected to the source.Trashmanal 17:50, 16 May 2007 (UTC)

I believe the following statement is incorrect: The drain and source may be doped of opposite type to the body, in the case of enhancement mode FETs, or doped of similar type to the body as in depletion mode FETs. Field-effect transistors are also distinguished by the method of insulation between body and gate. Types of FETs are: To my understanding the drain and source are ALWAYS doped opposite that of the body/substrate, and it is the channel that connects drain to source that is either the same (enhancement type) or the opposite (depletion type) of the body/substrate.Trashmanal 17:54, 16 May 2007 (UTC)

Good catch. The channel at the surface near the gate is what is doped to be similar to the drain and source for depletion mode. It is often adjusted in both enhancement and depletion mode.Snafflekid 23:58, 16 May 2007 (UTC)

mosfet symbols
The schematic for your MOSFET shows a solid line connecting the Source and Drain. Does this not indicate a depletion mode MOSFET?. An enhancement mode MOSFET is symbolically shown with a dashed line between the Source and Drain.

The arrows for the 'metallurgical' contacts point at the bottom of the N diffusions. The metal contact is on the top surface. Shouldn't your arrows point to the upper surface of the N regions?.

 * All textbooks use different notations. I can't remember right now what is right, and what is depletion, enhancement, etc...  However, should use standard IEEE conventional symbols, whatever those are, and we should state that they are the IEEE standard symbols.  If there are some common "misuses" of the symbols out there, then we should mention that.  So first thing I think is to check IEEE and see if there are standard symbols, and secondly to check something like Art of Electronics and see what it uses.  dave 22:06, 16 Oct 2003 (UTC)

IEEE: http://ewh.ieee.org/soc/es/Nov1998/14/education/

 * You are right about the 'metallurgical' junctions, they are on top of the diffusion region and are not the same! Modern FETs do not only use high doping, but also metal silicides at this place.--Qdr 17:12, 17 Jul 2004 (UTC)

MOSFET section
I'm planning on doing a lot of work on the MOSFET section. I hope to discuss how MOSFETs are evolving to smaller and smaller submicron dimensions, and the problems designers are encountering...obviously non-technically. I've created two subcategories I want to expand upon--why MOSFETs are so popular and the problems with scaling. Rmalloy 13:47, 14 Jul 2004 (UTC)

I think some work needs to be done in the introduction to MOSFET...most important part. for later. Rmalloy 18:38, 14 Jul 2004 (UTC)

 * Thanks for your efforts! I assume at some point it would make sense to put all MOSFET stuff in separate article. Agreement? Pjacobi 19:26, 14 Jul 2004 (UTC)

 * I dunno, I'm new here and don't know what the protocols are. As long as info is easily accessible it makes little difference to me. I'm not going to touch stuff like that. Rmalloy 20:06, 14 Jul 2004 (UTC)

 * It could make sense to have a rather generic introduction to FETS on this page and move all the details (different types, processing, materials) to other pages. --Qdr 17:12, 17 Jul 2004 (UTC)

 * Splitup plan, please comment under each point if necessary. If no active disagreement is seen, I'll do the splitup around 2004-07-19 21:00 UTC. Pjacobi 18:49, 18 Jul 2004 (UTC)
 * The MOSFET specific parts of Field Effect Transistor will be moved.
 * This applies to section MOSFET (currently 1.1) and DMOS (currently 1.5).
 * It will go to http://en.wikipedia.org/w/wiki.phtml?title=MOSFET&redirect=no which is currently a redirect.
 * The JFET, MESFET, and HEMT sections are not yet substantial enough to be moved to separate articles.

 * Sounds good, but I think also the other types of FET devices should be moved somewhere as they are way too specialized for a generic introduction. Maybe an article about "special" or "exotic" FETs? --Qdr 19:59, 18 Jul 2004 (UTC)

 * Lumping together JFETs and MESFETSs into Field effect transistor (exotic) (or Field effect transistor (bizarre)]?) will break my heart ;-). I'd vote keeping them (temporarily) in the main article, or as a second choice, make all separate articles, even when [[HEMT will be a short one. Pjacobi 21:34, 18 Jul 2004 (UTC)

 * I vote for separate articles, maybe that is also an incentive to extend the individual articles a little. And btw, there should also be a link to TFTs in the main FET article. --Qdr 22:17, 18 Jul 2004 (UTC)

 * I second this. With some diagrams all of these transistor types would be good separate articles. I think Field effect transistor should be a list of links. Maybe some generic discussion. Rmalloy 00:14, 19 Jul 2004 (UTC)

 * Rmalloy: There are some inaccuracies in your additions: The reason for using polysilicon as a gate material is the reduction of interface states and the self aligned S/D diffusion. Replacing it with metals (for example TaN, TiN) is subject of current research. Current gate oxide thicknesses are way below the 20nm you stated, I changed it to 2nm. But somebody should look up an accurate number. The problem with thin oxides is not breakdown, but leakage by quantum mechanical tunneling of electrons through the oxide. To remedy this, the industrie works on high-k dielectrics.--Qdr 17:41, 17 Jul 2004 (UTC)

 * QDR: First-off, I must admit that I haven't worked in this area for 2 years. But I think I am right about the polysilicon gate. The self-aligned S/D diffusion process would work equally well with a metal gate. I went back and looked at some stuff I wrote on www.everything2.com when I was a grad student in this area. Look at the article MOSFET that describes and shows diagrams of the fabrication process. The self-alignment process work the same if the gate were aluminum. I'm 99% sure that the reason you can't use aluminum is that there is a high-temperature annealing step after the gate is deposited, and this would melt aluminum. Now the reason the annealing must be done after the gate is deposited relates to the self-alignment process (S/D to be annealed created after gate), so we could be both right in a sense.

 * I looked up the melting points of the metals you mention, and they have very high melting points. When I was a grad student, I don't recall much effort into using these metals as gates. I don't know why, so I won't argue. But I do remember heavy emphasis on the silicides, like I wrote in this article. I know what surface states are, but I don't see how they relate.

 * 2nm is the accurate number. I meant 20 angstroms. 2nm was considered an absolute cutoff.

 * Now my memory is that 2nm is still a long way for an electron to tunnel. I seem to recall that, like I said, the oxide broke down, creating states in the oxide that acted like rocks across a river that you can jump across, facilitating tunneling. So I won't argue with you here...we might both be right. And it's not worth arguing. But I'm 99% sure that 2nm was the cutoff, considered absolute by the chief technology officer of TSMC. And I agree about the high-K dielectrics, and mentioned it in the article. Rmalloy 18:54, 17 Jul 2004 (UTC)

 * I did some quick websearching. An Intel site claims successful operation with 1.2nm of gate oxide, so I guess I'll have to bite my tongue on 2nm. And I'm reminded of another key issue for gate materials--work function. The current setup, where the source, drain, and gate are all doped heavily at the same time gives the gates the proper work function for the transistor type--NMOS or PMOS. Successful metal gate processes would require two kinds of metals--one work function for each transistor-type. It's dawning on me that the choice of gate materials involves several issues, including all the ones we've mentioned and probably several more.

 * Feel free to clean up, correct, or add to anything I wrote. These issues are complex and there are many issues to discuss...maybe it would be best to avoid difficult issues like this altogether in an encyclopedia. Phew I'm glad I left this field! Rmalloy 16:35, 18 Jul 2004 (UTC)

 * The oxide thickness is a moving target, IMO around 2nm is a good guess. Intels 1.2 nm oxide was probably already nitrited oxide. There are many candidates for new metal gates, however the ones I quoted have been announced by the IMEC recently. And yes, there are various leakage mechanisms (poole frenkel, schottky emission into insulator valence band, direct tunneling, fowler-Nordheim) and they are enhanced by soft breakdown, however they are usually not regarded as breakdown itself.

 * I am pretty sure that the main incentive to use polysilicon gates was the self aligning SD process, back in the 70ies. I do not know the exact problem with Al gates and the self aligning process, but for example the spacer oxide would be pretty difficult to apply to an Al-Gate. Anyways, all of this is way too detailed for a Wikipedia article, the best way is to formulate it as generic as possible. --Qdr 19:59, 18 Jul 2004 (UTC)

 * Good point about the spacer. I have the melting thing stuck in my head...I must have picked it up somewhere. I agree this is all too detailed for Wikipedia, but I guess I thought some explanation for the polysilicon gate would be advisable. At first glance, polysilicon is a very strange choice for gate material. You obviously know what you're talking about, so don't hesitate to delete or change anything I wrote. Rmalloy 00:14, 19 Jul 2004 (UTC)

Analog circuits
I've added all I feel comfortable adding about MOSFETs in analog circuits. I wish someone could discuss analog stuff, since everything is so digital digital digital. Rmalloy 23:38, 14 Jul 2004 (UTC)
 * Added an explanation of how FETs actually work. Pinchoff and all that. --Wjbeaty 08:17, Apr 3, 2005 (UTC)

 * Sorry, I see that you had quite a bit of work with your recent addition. However, I don't think it belong to this article and thus reverted it.
 * *You explained the operation of a JFET only. This is a rarely used special type of FET, the explanation does not apply to common MOSFETS. Maybe you could improve the JFET section?
 * *The operation of the different types of field-effect transistors is already explained in the articles for the respective devices. There is no need for detailed information about the operation in the main article. See also thread above. --Qdr 11:57, 3 Apr 2005 (UTC)

 * "You explained the operation of a JFET only" What?  Please justify such a statement.  As I understand it, you're completely incorrect.  Which part of my explanation do you think doesn't apply to all types of FETs? (Ah, I see one issue: the present MOSFET article only describes enhancement-mode devices, not MOSFETs in general.  Perhaps I should move this analog/pinchoff explanation to both JFET and MOSFET articles rather than having a general FET explanation here.)
 * Also, please indicate where on WP the "pinchoff" phenomenon is explained. I don't get any search hits at all.  This stuff is common to all FETs: it's the essence of the "analog mode" explanation of FET operation.  Could you explain why it doesn't belong in the main article?  Should there be a separate article to explain generalized FET operation (including pinchoff mechanism?)
 * I note that Rmalloy says above, "I wish someone could discuss analog stuff." I attempted to do so.  Rather than removing it, shouldn't you post your own version of a general analog-based FET explanation?  Or if you object to specific details of my analog explanation, please edit them. --Wjbeaty 02:22, Apr 4, 2005 (UTC)

A quesiton: "The MOSFET's strengths as the workhorse transistor in most digital circuits does not translate into supremacy in analog circuits, in which the bipolar junction transistor (BJT) has traditionally been seen as the transistor of choice, due largely to its high gain." This does not seem correct, since FETs have near-infinite gain - essentially no current flows into the gate. Glengarry 21:09, 15 Jul 2004 (UTC)

 * Bad subject-verb agreement for one thing :(.

 * Ok, this is not an area I know a lot about, but let me try to explain as best I can. "Gain" invariably means "small signal voltage gain" (output signal voltage / input signal voltage). The fact that a MOSFET gate allows no DC current isn't relevant (though its true). The job of analog circuits is to handle small signals.

 * Suppose a transistor is being used for amplification in an analog circuit, it is "DC biased" to put it in the high gain regime. A small signal voltage is applied between gate and source (or between base and emitter), creating a small signal current from drain to source (or from collector to emitter). The ratio of this small signal current to the small signal voltage is called "transconductance." My sense is that BJTs have substantially higher transconductance than MOSFETs. For a tiny bit of support, see http://www-inst.eecs.berkeley.edu/~ee130/SP03/homework/hw13soln.pdf. This small signal current may drive a resistive load, giving an small signal output voltage of the current times the resistance of the load. Thus you end up with a higher "gain" (output voltage/input voltage).

 * I'm really shaky on everything analog, and that's why I made such a vague statement. I just felt like it would be inappropriate to only talk about digital stuff when analog circuits are very important. I think what I wrote is essentially correct, but if someone wants to delete it that's fine. I'd rather someone teach me though! Rmalloy 00:42, 16 Jul 2004 (UTC)

 * The gain issue is easily misinterpreted and is always good to start a flame war at news://sci.electronics.* or http://www.diyaudio.com. I'd write something into article but for the fear of a edit war! In essence there are four quantities which can be seen as geen dV(out)/dV(in), dI(out)/dV(in), dV(out)/dI(in), and dI(out)/dI(in). Of course MOSFET score big on dV(out)/dI(in) and dI(out)/dI(in) in NF, as no input current flows, but the practical significance is more that there is moe leeway in designing the preceeding stage.
 * What's more the problem with MOSFETs in discrete designs, is the variabiliy of there threshold voltage.
 * Pjacobi 07:27, 16 Jul 2004 (UTC)

 * It's not true that no *small signal* input current flows into a MOSFET. Current is constantly charging and discharging the MOSFET gate, so dI(in) != 0. In fact, capacitors, like the MOS capacitor, are short-circuits to high-frequency current. I think this topic is probably best left alone in the article unless someone is an expert on the subject, so we avoid misinformation.Rmalloy 13:04, 16 Jul 2004 (UTC)

 * Agreed that the transconductance of a BJT is favorable compared to a MOSFET. I'll made the change in the article. Thanks, Glengarry 14:56, 16 Jul 2004 (UTC)

basic circuits
each basic circuit needs an article. common source, common drain, common gate, source follower amplifiers, etc. i can, of course, draw schematics. but i don't know these well enough to do the articles. i can start them with what i know... same for BJTs. - Omegatron 16:00, Jan 19, 2005 (UTC)

BJTs as voltage controlled resistors
I ve not heard this one before. So we can all now use BJTs instead of FETs to create a voltage controlled resistor. I dont think so! Statement needs modifying/removing cos its wrong. Light current 04:11, 17 August 2005 (UTC)

 * Saying "wrong" loudly doesn't help. You have to say why it's wrong.   In fact it's not wrong: the current in any diode is controlled by the width of the depletion layer, and this width is controlled by the voltage across the diode.  The same applies to BJT transistors: the BE voltage determines the width of the depletion layer in the BE junction, and this layer controls both the base current and the emitter current.  Yes, the collector current is proportional to the base current.  But if you believe that the base current can directly control the collector current, then you don't understand how BJT transistors actually work.   The simple transistor equation is Ic = hfe * Ib, but this hides the physics behind the BJT operation.  The full-blown Eber-Molls transistor equations show what's happening:  Both Ib and Ic are mostly determined by Vbe. --Wjbeaty 00:17, August 19, 2005 (UTC)

 * All Im saying is that a BJT is NOT a voltage controlled resistor (because of the high impedance at the collector) as the article initially implied. Light current 00:23, 19 August 2005 (UTC)

 * OK, but then the same reasoning says that FETs aren't voltage-controlled resistors either.  Both BJTs and FETs are voltage-controlled current sources. --Wjbeaty 00:34, August 19, 2005 (UTC)
 * No, I dont agree. FETs appear totally resistive near the origin (below pinch off), thats why they can be used as VCRs. In fact Siliconix made aspecial range of FETs for this very purpose (VCR2N, VCR3P, VCR4N, VCR5P,VCR6P,VCR7N). Are you saying that BJTs can give as good a perfomance as FETs in this region??Light current 00:55, 19 August 2005 (UTC)
 * Agree that FETs are not VCRs when pinched off. I've altered staement in article. See if you agree with it.Light current 01:16, 19 August 2005 (UTC)

 * Besides, it says "can be thought of":
 * "FETs, like all transistors, can be thought of as voltage-controlled resistors."
 * As a teaching aid for someone completely new to transistors, this is a good analogy, and is used often:
 * The Rheostat as a Transistor
 * The Field Effect Transistor as a Voltage Controlled Resistor
 *
 * Much better than telling them it's an "amplifier". We can certainly change it to say "as a very rough first approximation" or something. - Omegatron 22:52, August 21, 2005 (UTC)
 * I think saying 'voltage controlled resistor' can be confusing to the newcomer (and more experienced people) because it gives the impression that the transistor collector looks like a resistor when in fact it looks like a current source/sink. I think we should say 'all transistors act as voltage controlled current sources' (as User:Wjbeaty has suggessted).Light current 17:11, 24 August 2005 (UTC)

Are you guys saying that a bipolar transistor is a voltage-controlled device? That’s wrong they are current controlled. Small base current change gives large collector current change. The FET is a voltage-controlled device. Which I like using in my projects because they are the closest things to tubes, which I cut my wisdom teeth on in the late 60's early 70's. Inkdoe 13:22, 20 October 2005

What about MFET ? Magnetic Field effect transistors, and spintronic ?
 * What about them? If you know about these devices, please feel free to add material on them. :-) Light current 11:53, 28 August 2005 (UTC)

moved from page;

"	Field Effect Transistor (FET) patented in 1934 by Dr. Oskar Heil. Personally first read about the FET patent year in Analog Science Fiction Science Fact magazine in the late 70s early 80s in an article about hearing aides by Larry Niven or Jerry Pournelle."

Errors ID'd by Nature, to correct
The results of what exactly Nature suggested should be corrected is out... italicize each bullet point once you make the correction. -- user:zanimum

 * In the section on USES, CMOS is the acronym for Complementary Metal Oxide Semiconductor.
 * The first sentence of the section “FET Operation” mentions a “potential voltage” which is misleading. In electrical terminology “potential” and “voltage” tend to mean the same and hence both are not normally used together. It is best to use the word VOLTAGE alone for the purposes of describing how the FET works.
 * There are many types of FET but the section on FET Operation describes a “normally-on” or “depletion mode” type of MOSFET. However, it is usual to employ a “normally-off” MOSFET for CMOS devices which are described in the section on USES.

Behavior of d mode FETs
Near the top, the article says "depletion, in which a voltage applied decreases the current flow from source to drain." This isn't true, is it? I think whoever wrote that sentence was confusing the difference between n-channel and p-channel, with the difference between enhancement mode and depletion mode. It would be more accurate to say "enhancement mode, which is normally off, when zero voltage is applied, and depletion mode, which is normally on, when zero voltage is applied." Objections to this change? --Monguin61 17:55, 4 March 2006 (UTC)

 * It's true depending on what definitions are used, but it's definitely not clear. It's hard to make things both accurate and accessible. How do you define "when zero voltage is applied" without making things too complicated? - mako 03:30, 5 March 2006 (UTC)

 * I think "normally off" and "normally on" should suffice. That's more towards the accessible side than accurate, but more accurate than the current phrasing, yes? --66.253.212.165 08:09, 7 March 2006 (UTC)

What's the difference between an NPN transistor and a FET?
I was wondering what the difference between an NPN transistor used in TTL logic for example, and a(n) FET transistor?

Do they not both work by applying a small current to the base to all a current to pass through?

So what are the differences between the construction/operation of an NPN transistor and a(n) FET transistor?

This page didn't really give me much help on the construction of a(n) FET transistor, as from what I see it looks EXACTLY the same as an NPN transistor. And from what I can see it works the same way too, except somehow uses energy mostly when switching states instead of during. How is it that it uses less energy than an NPN transistor?

What are the main differences between a(n) FET transistor and an NPN transistor?

How is it that an NPN transistor uses up more energy than a(n) FET transistor?

How is it that a(n) FET transistor has to be used differently for logic gates than an NPN transistor?

Thanks so much for your help! --TAz69x 23:50, 16 April 2006 (UTC)

 * basically, a FET is a voltage-controlled device, whereas a bipolar transistor^(NPN or PNP) is current-controlled. A good explanation of the operating principle of one of the FETs is given in the JFET article. A FET is a majority carrier device. There is no need to inject carriers to modify the behaviour of a zone, like with the bipolar transistor (which is a minority carrier device). Instead, in a FET, we use an electric field to attract or repel charges that are already present in the material.

 * It is difficult to tell what are the difference in construction with a bipolar, because the FET family is quite large. Compare the cross sections in the JFET, MOSFET, bipolar transistor articles. FET use less energy than bipolar because they absorb almost no current when in the on-state. The input of a FET can be seen as a capacitor: you only need to supply current to charge the capacitor. You don't have to supply energy once the capacitor is charged! The input of a bipolar transistor is like a diode: once you reach the threshold voltage of the diode, current starts to flow, so you have to supply energy to bias the diode.

 * Concerning the use of FET in logic, I think you should have a look at the CMOS article. Hope it helps -- CyrilB 08:46, 17 April 2006 (UTC)

Field Effect Transistors as Light Detectors
I have recently been investigating the process by which a PIN diode can modulate a signal as a result of incident radiation. My main point of confusion has been my inability to find any mechanical diagrams of a PIN diode which operates through the presence of 3 terminals. Most of what I have read suggests that this is a strictly 2-terminal device (the PIN in question, a Hamamatsu S5971). I came across a diagram for a FET, and was struck by not only the presence of the proper number of terminals, but the drain signal's dependence on variations in the space charge region. I am mainly curious as to the possibility that my PIN may be closer in design to an FET, through the use of the intrinsic region as the source of the drain terminal. Whether this is may be a step in the proper direction or its equally likely counterpart, I would appreciate any insight that may be offered on the subject. Jmeyers 18:39, 10 May 2006 (UTC)

I don't know of any similarity between a PiN diode and a FET. A PIN diode is a two terminal device, operated in reverse bias. Light on the diode causes carrier generation which effectively looks like a leakage current proportional to the light on the PIN diode. Even a PN junction diode does this, the largish I (intrinsic) portion just increases the area where generation occurs making it more sensitive to light. Maybe the charge coupled device is what you have in mind as a three terminal device, or a phototransistor. Snafflekid 23:34, 10 May 2006 (UTC)

Pinch off description... wrong or misleading!!
It costed 2 days of research, but i finally find out that the confusion in my head came from your description of the pinch-off mode. In your description you talk about the "saturation" area, where increasing source voltage you don't have corresponding increase of drain current and you call it pinch-off ... but still there is current and its value depend on the value of the gate voltage. While the pinch-off voltage is the value of the GATE voltage for which there is no drain current at all, for any value of source-to-drain voltage (even in the ohmic region!).

see reference: http://www.st-andrews.ac.uk/~jcgl/Scots_Guide/info/comp/active/jfet/jfetchar/jfetchar.htm

152.78.72.52 20:03, 3 February 2007 (UTC)

 * Hm? When the channel pinches off, that doesn't imply zero current flow at all, it merely makes the drain current a much weaker function of drain voltage (until you apply sufficient bias to trigger a breakdown mechanism).  This is because the pinched off (spacial) area is a depletion region.  Most of the applied bias beyond the saturation (pinch-off) voltage is dropped over this depletion region, thus it contains a large internal electric field that can sweep carriers from one side to the other (so current still has a path to flow).  Since bias beyond Vsat is dropped over the depletion region rather than the channel, the S-D current no longer changes very much with the drain voltage, so the drain current stays relatively constant beyond the pinch-off point; the so-called "saturation region".  Of course the current still does increase slightly with increasing drain voltage, and this is mostly due to channel length modulation (additional bias expands the depletion region and thereby shortens the channel).  Admittedly, the explanation in the article is a little confusing, but it seems accurate.
 * If you're really interested in learning this stuff, pick up a book on semiconductor devices and physics. You won't get a good intuition for how devices work just from reading a Wikipedia article.  The Pierret, Sze, and Neaman books are all pretty good.  -- mattb

Ok... looking around for even longer i solved my doubts, i just want to leave the observation for others: the pinch off point is indeed what you describe. In particular, for Vgate=0 is the value of Vsource=Vpo when the saturation start (the channel is "almost close"). But on the other side if Vgate=Vpo, the channel is already almost close by the bias of the gate, so the drain current "saturate" soon, for very small value, and stay almost zero for any value of Vsource. That's why it can be seen in a transconductance graph as the value of Vgate for Idrain=0. Am I right?

This comment was added by ???

Is it possible to make an animation of a saturated FET opening, where the self-consistent potential is shown as the height and some electrons as spheres running over it. Drain and gate held at fixed potential and as the source potential rises, electrons spill over? Arnero 05:15, 1 August 2007 (UTC)

like in static image Arnero 05:33, 1 August 2007 (UTC)

You won't get a good intuition for how devices work just from reading a Wikipedia article.
 * Well you certainly should...

fixed potential and as the source potential rises, electrons spill over?
 * Anything with spheres moving over an edge is probably going to be more misleading then helpful. We should always think long and hard about illustrations to make sure they  really help understanding and don't lead newcomers down the wrong road. — Omegatron 02:47, 3 August 2007 (UTC)

Something like this: http://jas.eng.buffalo.edu/education/semicon/diffusion/diffusion.html ? Anyhow, the "simulation" is to time consuming for me to code, and I did not find any tool in the web. And the animation would be pretty large. Arnero 11:19, 7 August 2007 (UTC)

Saturation explanation error?
I'd like seconding by someone more expert than myself before making any changes; The article says (Para 5 of section 'FET Operation'); "The shape of the inversion region becomes "pinched-off" near the drain end of the channel". Unless I am mistaken, when a positive potential difference is applied between D and S the pinch region is at the source end of the channel, as the potential difference pulls the charge carriers in the inversion region (the electrons) closer to the drain (positive potential). This is corroborated by my own knowledge as well as (not explicitly) here. Comments please, Spychotic (talk)

This is not an error actually. Channel starts pinching off near Drain side first due to the voltage drop in the channel itself.--Murat (talk) 19:31, 22 November 2009 (UTC)

 * Moreover, the original poster is only half wrong. The positive potential at the drain is the reason for the pinch off. However, it is not pulling carriers from the inversion region toward the drain. Instead, it is holding carriers already in the drain to limit their entry into the inversion region. Hence, the source contributes more carriers to the inversion region than the drain, and so the channel's shape is asymmetric with a "wide bottom" near the source. (so the confusion seems to be about where the carriers in the inversion region "came from"; in an enhancement-mode FET, their "home" is in the source and drain) —TedPavlic (talk/contrib/@) 19:26, 23 November 2009 (UTC)

FET?
I keep seeing references to "FETs" as an ancient predecessor to MOSFETS et al described herein. What kind of FET is one referring to then? -143.215.155.50 (talk) 03:55, 10 October 2008 (UTC)

 * How about to a reference to where you're seeing this? Doesn't sound familiar. Dicklyon (talk) 05:06, 10 October 2008 (UTC)

History??
Why is there no FET history section? When and how was the FET created? -143.215.155.50 (talk) 03:55, 10 October 2008 (UTC)

 * I added a brief history section with a main link to the history of the transistor article. Dicklyon (talk) 05:07, 10 October 2008 (UTC)

lack of explanation of the inversion layer formation
There is a lack of information regarding the physics of channel inversion ... that is when the p type semiconductor has an n type channel formed under the gate. The statemant below is wrong.. the phenomenom is not called the threshold voltage, threshold is just the voltage at which this occurs and current begins conducting through the channel... the phenomenom is called inversion.

"..........; this forms a region free of mobile carriers called a depletion region, and the phenomenon is referred to as the threshold voltage of the FET. " —Preceding unsigned comment added by Jonnic1 (talk • contribs) 10:02, 29 January 2009 (UTC)
 * Agreed. That section needs major copyedits or perhaps a complete rewrite. For exampel, the terms threshold voltage, inversion, and depletion should all be used, but they should not necessarily all be used in the same sentence. The section should more carefully discuss inversion. —TedPavlic (talk) 16:41, 29 January 2009 (UTC)

New "Transistor channel" page
A new Transistor channel page was recently created. After some discussion on its talk page, the original author changed it to a redirect to a FET subsection and moved the original content to Talk:Transistor channel/draft. Please review that page (with emphasis on the discussion in the talk page). The author feels that transistor channels are not adequately handled on the FET page and feels that the subject is rich enough to warrant a separate page.

I'm not quite sure I understand the argument, as a detailed discussion of the operation of unipolar channels seems identical to a detailed discussion of FET operation. So perhaps the FET page needs to be enhanced. Either way, the page was created and a discussion was started, and I think people who read this page would be interested. —TedPavlic (talk) 14:05, 29 January 2009 (UTC)

 * And I advised the new editor that if he doesn't get consensus here, he may find it merged back when he's done. I'm undecided on which way to go (enhance this page, or deplete it to a split).  Dicklyon (talk) 16:28, 29 January 2009 (UTC)

 * In retrospect, the existence of a page like "threshold voltage" is a precedent for creating more such small pages. I just worry that these small pages are really just trying to fill in information that belongs to the FET page. The MOSFET page is very long and developed (and is a much better page than the FET page), and it probably describes unipolar operation much better than anything here. In a perfect world, I think a completely rewrite of the FET page would not only alleviate the need for pages like "threshold voltage" (and transistor channel) but would allow other FET pages (like MOSFET and JFET and MESFET) to be shorter/clearer. ON THE OTHER HAND, having very generic threshold voltage–type pages might make it easier to make pages like MOSFET more concise because each FET page could share wiki links to things they have in common. So I'm torn... But I think the current transistor channel work looks more like a FET rewrite, and so it maybe should be here... I think... Hm. —TedPavlic (talk) 16:45, 29 January 2009 (UTC)

 * MOSFET is at about 40 KB, and transistor at 64 KB, large compared to suggested article size. Splits like these can be useful in allowing room to develop the subtopic.  The threshold voltage article is not bad, has a half dozen refs.  If the transistor channel gets to that point, it might be OK.  Dicklyon (talk) 17:31, 29 January 2009 (UTC)

Sentence suspected having errors
I think this sentence contains errors. Anybody else?

"The drain and source may be doped of opposite type to the channel, in the case of enhancement mode FETs, or doped of similar type to the channel as in depletion mode FETs."

User:Vanished user 8ij3r8jwefi 15:39, 23 October 2009 (UTC)

Yes, there is a problem. "Mode" of a FET as described above is related to the POLARITY of the voltage applied to the gate with respect to source, or more accurately with respect to the gate to channel junction. All FETs have ohmic contacts at both drain and source by definition, any doping that may be there is there to ENHANCE the ohmic nature and process or design specific not a general feature.--Murat (talk) 19:29, 22 November 2009 (UTC)

Although the original sentence certainly simplified matters, it was basically correct as written. The supposed "correction" was blatantly wrong and confusing. It contradicts every reference I've checked which describes the structure of enhancement mode and depletion mode FETs, and it also contradicts the article's own description of how these FETs work, as well as the description of enhancement mode and depletion mode MOSFETs in the MOSFET article. I've reverted it; pity no one else caught it over the last five years. :( --Colin Douglas Howell (talk) 12:02, 10 September 2014 (UTC)

NOMFET
Perhaps the brand new NOMFET (nanoparticle organic memory field-effect transistor) should be added.

See: http://www.physorg.com/news183373216.html

Codegrinder (talk) 21:56, 1 February 2010 (UTC)

Copyright problem removed
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 * Duplication report: Osiris (talk) 04:00, 23 June 2012 (UTC)

BJT mentioned six times without being explained
I don't know enough to make appropriate corrections, but I presume BJT refers to Bipolar Junction Transistors? It would be nice if the abbreviation was introduced and the reason that they are mentioned alongside Field Effect transistors was made clear. — Preceding unsigned comment added by 128.197.40.40 (talk) 14:32, 24 September 2012 (UTC)

Circuit schematic symbol for a FET
Would be useful to have an image showing the common circuit symbols for a FET (at least it would have been for myself who had to do a separate search on google images after finding the wikipedia page) Norlesh (talk) 11:05, 14 March 2014 (UTC)
 * Yes! It's rather remarkable that we don't have them already. The symbols for JFETs and MOSFETs would be useful to distinguish, also to explain details like the source-body internal tie. There's (surprisingly) nothing on Commons that I can see. Please use SVG if you create one, as the scalability would be useful. Andy Dingley (talk) 11:44, 14 March 2014 (UTC)

External links modified
Hello fellow Wikipedians,

I have just added archive links to 3 one external links on Field-effect transistor. Please take a moment to review my edit. If necessary, add after the link to keep me from modifying it. Alternatively, you can add to keep me off the page altogether. I made the following changes:
 * Added archive https://web.archive.org/20080706162027/http://www.ece.cmu.edu/~cssi/research/manufacturing.html to http://www.ece.cmu.edu/~cssi/research/manufacturing.html
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Request for explanation on role of 'body'
Hi guys, I'm new to the topic, and from this article (and all the others article on Wikipedia related to transistors), there is no clear explanation of the role of the body in FETs. An explanation in the section More about terminals would be greatly appreciated! Piero le fou (talk) 19:03, 19 April 2016 (UTC)

 * A good way to think of the body's effect on the operation of the transistor (in normal operating regions) is as a "back gate" terminal (e.g. see this book). It works just like the gate, though typically a bit less efficiently, as long as you keep the source–bulk and drain–bulk junctions reverse biased.  See Threshold voltage.  Years ago I tried to say something more sensible in the article, but Brews-ohare wouldn't let me.  We compromised, but it's fuzzy.  I'll see what I can dig up.  Dicklyon (talk) 20:46, 19 April 2016 (UTC)
 * For example, in this paper, we used the reduced efficiency of the bulk as a gate to make a differential amplifier with lower gain and wider input linear range; the inputs come directly into the body terminals of two transistors, and nowhere else. Dicklyon (talk) 20:54, 19 April 2016 (UTC)

BJT as Voltage or Current controlled device
A recent edit by 50.48.192.249 changed a statement about non-FET's being current controlled to voltage controlled devices. I feel like this should either be explained in more detail. From my knowledge of the matter, a BJT being voltage or current controlled depends on the "depth" one is willing to go and neither is strictly right or wrong. From an external perspective, yes, (in an NPN device) the voltage applied to the base-emmitor junction causes a current to flow in this PN junction. But on a "deeper" level, when you look at the junction physics, it is the electrons flowing from the emitor to the base that can then get "into" the collector before recombining in the base (asumming the base is small enough) causing a current from the collector to the emittor. In other words, a BJT cannot be boxed in as being purely "voltage" or "current" controlled, because unlike most FET's, which have a very high (and often assumed infinite) input impedance at low frequencies, making it clearly a voltage-controlled device, the BJT has a non-zero, and finite imput impeadance. In other words, It's not really a pure voltage or current controlled device.

I bring this up because I feel like this should be discussed in more detail to prevent a constant to and fro in the article. TheUnnamedNewbie (talk) 13:46, 25 January 2017 (UTC)

 * On a second read through the introduction, I feel like maybe the entire statement should just be removed. I think it's not really valid to speak of "all of the non-FET devices", as it implies that there are only two categories of devices, the FET's and the non-FET's. TheUnnamedNewbie (talk) 13:50, 25 January 2017 (UTC)

 * I edited the introduction to remove the "voltage" or "current" controlled statements. After thinking about it I felt like they could be misleading as they imply there is a "input" and an "output" terminal, which is not really the case (eg, common gate transistors in cascodes?). I'm open for counter arguments.

I also simplified it somewhat to not go into as much depth in the introduction. TheUnnamedNewbie (talk) 10:39, 28 January 2017 (UTC)

Check me
I corrected this in section #Effect of gate voltage on current. Even with the correction, the phrasing is poor and contains true but unnecessary information, given the purpose of the section. I'm not sure I'm qualified to edit it further.

"In a p-channel "depletion-mode" device, a positive voltage from gate to body creates a depletion layer by forcing the positively charged holes to the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions." — Preceding unsigned comment added by 173.127.144.113 (talk) 07:33, 18 June 2018 (UTC)

Distinguishing between source/drain "terminals"
An extremely rusty electronics engineer asks: if the source and drain are both doped in the same "direction" relative to the body, what actually makes them usefully different? Is it the dopant element or concentration, the geometry (e.g. penetration depth), or something completely different? MarkMLl (talk) 20:52, 4 August 2020 (UTC)

 * Apparently it depends on how the transistor is manufactured. I found the answers here pretty informative: https://www.quora.com/Can-the-drain-and-source-of-a-MOSFET-be-interchangable
 * Cphoenix (talk) 21:19, 30 May 2022 (UTC)

Date of Lilienfeld's FET concept patent
The History section states the FET was "first patented *** in 1925", but the patent was not filed until 8 October 1926 and not issued until 28 January 1930 as shown in the approval document cited. How should the Wikipedia text be changed: to reflect the year the patent was granted or the year of filing (more interesting)... assuming the "1925" is a mistake. Myron (talk) 23:31, 12 February 2021 (UTC)

 * https://en.wikipedia.org/wiki/History_of_the_transistor#Origins_of_transistor_concept 176.52.34.12 (talk) 12:20, 14 April 2024 (UTC)

Are FETs source/drain symmetrical?
https://www.quora.com/Can-the-drain-and-source-of-a-MOSFET-be-interchangable/answer/Jeff-Gruszynski

This answer (which looks detailed and coherent) says that MOSFETs as used in CMOS are not symmetrical.

The "Uses" section of the article currently says "The naming convention of drain terminal and source terminal is somewhat arbitrary, as the devices are typically (but not always) built symmetrical from source to drain."

If the Quora answer is correct, then the "Uses" section should be clarified.

Cphoenix (talk) 21:16, 30 May 2022 (UTC)

 * I agree with Cphoenix. This statement does not seem to be correct: "The source and drain terminals can thus be interchanged in practical circuits with no change in operating characteristics or function". Aren't the differences between eg common-drain and common-source topologies due to MOSFETs being controlled by their gate-source voltage (Vgs)? In practical circuits, at least DC circuits, flipping source and drain will result in a nonworking circuit because the polarity of Vgs changes. 209.160.150.130 (talk) 21:00, 7 September 2023 (UTC)

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title: Talk:Field-effect transistor